Datasheet

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STM32F103xF, STM32F103xG Electrical characteristics
132
5.3.8 PLL characteristics
The parameters given in Table 28 are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in Table 10.
5.3.9 Memory characteristics
Flash memory
The characteristics are given at T
A
= –40 to 105 °C unless otherwise specified.
Table 28. PLL characteristics
Symbol Parameter
Value
Unit
Min Typ Max
(1)
1. Guaranteed by characterization results, not tested in production.
f
PLL_IN
PLL input clock
(2)
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by f
PLL_OUT
.
18.0 25 MHz
PLL input clock duty cycle 40 - 60 %
f
PLL_OUT
PLL multiplier output clock 16 - 72 MHz
t
LOCK
PLL lock time - - 200 µs
Jitter Cycle-to-cycle jitter - - 300 ps
Table 29. Flash memory characteristics
Symbol Parameter Conditions Min Typ Max
(1)
1. Guaranteed by design, not tested in production.
Unit
t
prog
16-bit programming time T
A
= –40 to +105 °C 40 52.5 70 µs
t
ERASE
Page (2 KB) erase time T
A
= –40 to +105 °C 20 - 40 ms
t
ME
Mass erase time T
A
= –40 to +105 °C 20 - 40 ms
I
DD
Supply current
Read mode
f
HCLK
= 72 MHz with 2 wait
states, V
DD
= 3.3 V
--28mA
Write mode
f
HCLK
= 72 MHz, V
DD
= 3.3 V
--7mA
Erase mode
f
HCLK
= 72 MHz, V
DD
= 3.3 V
--5mA
Power-down mode / Halt,
V
DD
= 3.0 to 3.6 V
--50µA
V
prog
Programming voltage - 2 - 3.6 V
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