Datasheet

DS5792 Rev 13 87/143
STM32F103xC, STM32F103xD, STM32F103xE Electrical characteristics
135
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
5.3.12 Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
• A supply overvoltage is applied to each power supply pin
• A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 42. EMI characteristics
Symbol Parameter Conditions
Monitored
frequency band
Max vs. [f
HSE
/f
HCLK
]
Unit
8/48 MHz 8/72 MHz
S
EMI
Peak level
V
DD
= 3.3 V, T
A
= 25 °C,
LQFP144 package
compliant with IEC
61967-2
0.1 to 30 MHz 8 12
dBµV30 to 130 MHz 31 21
130 MHz to 1GHz 28 33
SAE EMI Level 4 4 -
Table 43. ESD absolute maximum ratings
Symbol Ratings Conditions Class
Maximum
value
(1)
Unit
V
ESD(HBM)
Electrostatic discharge voltage
(human body model)
T
A
= +25 °C, conforming to
JESD22-A114
22000
V
V
ESD(CDM)
Electrostatic discharge voltage
(charge device model)
T
A
= +25 °C, conforming to
JESD22-C101
III 500
1. Guaranteed by characterization results.