Datasheet

Electrical characteristics STM32F103xC, STM32F103xD, STM32F103xE
70/143 DS5792 Rev 13
Figure 27. Asynchronous multiplexed PSRAM/NOR write waveforms
Table 34. Asynchronous multiplexed PSRAM/NOR write timings
(1)(2)
1. C
L
= 15 pF.
2. BGuaranteed by characterization results.
Symbol Parameter Min Max Unit
t
w(NE)
FSMC_NE low time 5t
HCLK
– 1 5t
HCLK
+ 2 ns
t
v(NWE_NE)
FSMC_NEx low to FSMC_NWE low 2t
HCLK
2t
HCLK
+ 1 ns
t
w(NWE)
FSMC_NWE low time 2t
HCLK
– 1 2t
HCLK
+ 2 ns
t
h(NE_NWE)
FSMC_NWE high to FSMC_NE high hold time t
HCLK
– 1 - ns
t
v(A_NE)
FSMC_NEx low to FSMC_A valid - 7 ns
t
v(NADV_NE)
FSMC_NEx low to FSMC_NADV low 3 5 ns
t
w(NADV)
FSMC_NADV low time t
HCLK
– 1 t
HCLK
+ 1 ns
t
h(AD_NADV)
FSMC_AD (address) valid hold time after
FSMC_NADV high
t
HCLK
– 3 - ns
t
h(A_NWE)
Address hold time after FSMC_NWE high 4t
HCLK
-ns
t
v(BL_NE)
FSMC_NEx low to FSMC_BL valid - 1.6 ns
t
h(BL_NWE)
FSMC_BL hold time after FSMC_NWE high t
HCLK
– 1.5 - ns
t
v(Data_NADV)
FSMC_NADV high to Data valid - t
HCLK
+ 1.5 ns
t
h(Data_NWE)
Data hold time after FSMC_NWE high t
HCLK
– 5 - ns
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