Datasheet

Electrical characteristics STM32F103xC, STM32F103xD, STM32F103xE
62/143 DS5792 Rev 13
Figure 23. Typical application with a 32.768 kHz crystal
5.3.7 Internal clock source characteristics
The parameters given in Table 25 are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in Table 10.
High-speed internal (HSI) RC oscillator
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Table 25. HSI oscillator characteristics
(1)
1. V
DD
= 3.3 V, T
A
= –40 to 105 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
f
HSI
Frequency - - 8 - MHz
DuCy
(HSI)
Duty cycle - 45 - 55 %
ACC
HSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register
(2)
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from
the ST website www.st.com.
--1
(3)
3. Guaranteed by design.
%
Factory-
calibrated
(4)
4. Guaranteed by characterization results.
T
A
= –40 to 105 °C –2 - 2.5 %
T
A
= –10 to 85 °C –1.5 - 2.2 %
T
A
= 0 to 70 °C –1.3 - 2 %
T
A
= 25 °C –1.1 - 1.8 %
t
su(HSI)
(4)
HSI oscillator
startup time
-1-2µs
I
DD(HSI)
(4)
HSI oscillator power
consumption
- - 80 100 µA