Datasheet

Electrical characteristics STM32F103xC, STM32F103xD, STM32F103xE
108/143 DS5792 Rev 13
Figure 57. ADC accuracy characteristics
1. Example of an actual transfer curve.
2. Ideal transfer curve.
3. End point correlation line.
4. E
T = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.
Table 62. ADC accuracy
(1) (2)(3)
1. ADC DC accuracy values are measured after internal calibration.
2. Better performance could be achieved in restricted V
DD
, frequency, V
REF
and temperature ranges.
3. ADC Accuracy vs. Negative Injection Current: Injecting negative current on any analog input pins should
be avoided as this significantly reduces the accuracy of the conversion being performed on another analog
input. It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially
inject negative current.
Any positive injection current within the limits specified for I
INJ(PIN)
and ΣI
INJ(PIN)
in Section 5.3.14 does not
affect the ADC accuracy.
Symbol Parameter Test conditions Typ Max
(4)
4. Guaranteed by characterization results.
Unit
ET Total unadjusted error
f
PCLK2
= 56 MHz,
f
ADC
= 14 MHz, R
AIN
< 10 kΩ,
V
DDA
= 2.4 V to 3.6 V
Measurements made after
ADC calibration
±2 ±5
LSB
EO Offset error ±1.5 ±2.5
EG Gain error ±1.5 ±3
ED Differential linearity error ±1 ±2
EL Integral linearity error ±1.5 ±3
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