Datasheet

DocID14611 Rev 10 67/136
STM32F103xC, STM32F103xD, STM32F103xE Electrical characteristics
129
Figure 26.Asynchronous multiplexed PSRAM/NOR read waveforms
Table 32.Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings
(1)(2)
1. C
L
= 15 pF.
2. Based on characterization, not tested in production.
Symbol Parameter Min Max Unit
t
w(NE)
FSMC_NE low time 3t
HCLK
– 1 3t
HCLK
+ 2 ns
t
v(NWE_NE)
FSMC_NEx low to FSMC_NWE low t
HCLK
– 0.5 t
HCLK
+ 1.5 ns
t
w(NWE)
FSMC_NWE low time t
HCLK
– 0.5 t
HCLK
+ 1.5 ns
t
h(NE_NWE)
FSMC_NWE high to FSMC_NE high hold time t
HCLK
-ns
t
v(A_NE)
FSMC_NEx low to FSMC_A valid - 7.5 ns
t
h(A_NWE)
Address hold time after FSMC_NWE high t
HCLK
-ns
t
v(BL_NE)
FSMC_NEx low to FSMC_BL valid - 0 ns
t
h(BL_NWE)
FSMC_BL hold time after FSMC_NWE high t
HCLK
– 0.5 - ns
t
v(Data_NE)
FSMC_NEx low to Data valid - t
HCLK
+ 7 ns
t
h(Data_NWE)
Data hold time after FSMC_NWE high t
HCLK
-ns
t
v(NADV_NE)
FSMC_NEx low to FSMC_NADV low - 5.5 ns
t
w(NADV)
FSMC_NADV low time - t
HCLK
+ 1.5 ns
NBL
Data
FSMC_NBL[1:0]
FSMC_
AD[15:0]
t
v(BL_NE)
t
h(Data_NE)
Address
FSMC_A[25:16]
t
v(A_NE)
FSMC_NWE
t
v(A_NE)
ai14892b
Address
FSMC_NADV
t
v(NADV_NE)
t
w(NADV)
t
su(Data_NE)
t
h(AD_NADV)
FSMC_NE
FSMC_NOE
t
w(NE)
t
w(NOE)
t
v(NOE_NE)
t
h(NE_NOE)
t
h(A_NOE)
t
h(BL_NOE)
t
su(Data_NOE)
t
h(Data_NOE)