Datasheet

Electrical characteristics STM32F103x8, STM32F103xB
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5.3.8 PLL characteristics
The parameters given in Ta ble 2 6 are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in Table 8.
5.3.9 Memory characteristics
Flash memory
The characteristics are given at T
A
= –40 to 105 °C unless otherwise specified.
Table 25. Low-power mode wakeup timings
Symbol Parameter Conditions Typ Unit
t
WUSLEEP
(1)
1. The wakeup times are measured from the wakeup event to the point in which the user application code
reads the first instruction.
Wakeup from Sleep mode Wakeup on HSI RC clock 1.8 µs
t
WUSTOP
(1)
Wakeup from Stop mode
(regulator in run mode)
HSI RC wakeup time = 2 µs 3.6
µs
Wakeup from Stop mode
(regulator in low power mode)
HSI RC wakeup time = 2 µs, Regulator
wakeup from LP mode time = 5 µs
5.4
t
WUSTDBY
(1)
Wakeup from Standby mode
HSI RC wakeup time = 2 µs, Regulator
wakeup from power down time = 38 µs
50 µs
Table 26. PLL characteristics
Symbol Parameter Test conditions
Value
Unit
Min
(1)
1. Based on characterization, not tested in production.
Typ Max
(1)
f
PLL_IN
PLL input clock
(2)
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by f
PLL_OUT
.
18.0 25 MHz
PLL input clock duty cycle 40 60 %
f
PLL_OUT
PLL multiplier output clock 16 72 MHz
t
LOCK
PLL lock time 200 µs
Table 27. Flash memory characteristics
Symbol Parameter Conditions Min
(1)
Typ Max
(1)
Unit
t
prog
16-bit programming time T
A
= –40 to +105 °C 40 52.5 70 µs
t
ERASE
Page (1 KB) erase time T
A
= –40 to +105 °C 20 40 ms
t
ME
Mass erase time T
A
= –40 to +105 °C 20 40 ms