Datasheet

STM32F103x8, STM32F103xB Electrical characteristics
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High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
Wakeup time from low-power mode
The wakeup times given in Table 25 is measured on a wakeup phase with a 8-MHz HSI RC
oscillator. The clock source used to wake up the device depends from the current operating
mode:
● Stop or Standby mode: the clock source is the RC oscillator
● Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and V
DD
supply
voltage conditions summarized in Ta ble 8 .
Table 23. HSI oscillator characteristics
(1) (2)
1. Guaranteed by design, not tested in production.
2. V
DD
= 3.3 V, T
A
= –40 to 105 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
f
HSI
Frequency 8 MHz
ACC
HSI
Accuracy of HSI oscillator
T
A
= –40 to 105 °C ±1 ±3%
T
A
= –10 to 85 °C ±1 ±2.5 %
T
A
= 0 to 70 °C ±1 ±2.2 %
T
A
= 25 °C ±1 ±2%
t
su(HSI)
HSI oscillator start up time 1 2 µs
I
DD(HSI)
HSI oscillator power
consumption
80 100 µA
Table 24. LSI oscillator characteristics
(1)
1. V
DD
= 3 V, T
A
= –40 to 105 °C unless otherwise specified.
Symbol Parameter
Min
Typ Max Unit
f
LSI
(2)
2. Based on characterization, not tested in production.
Frequency 30 40 60 kHz
t
su(LSI)
(3)
3. Guaranteed by design, not tested in production.
LSI oscillator startup time 85 µs
I
DD(LSI)
(3)
LSI oscillator power consumption 0.65 1.2 µA