Datasheet

DocID15060 Rev 7 53/99
STM32F103x4, STM32F103x6 Electrical characteristics
98
5.3.10 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
DD
and
V
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 30. They are based on the EMS levels and classes
defined in application note AN1709.
I
DD
Supply current
Read mode
f
HCLK
= 72 MHz with 2 wait
states, V
DD
= 3.3 V
--20mA
Write / Erase modes
f
HCLK
= 72 MHz, V
DD
= 3.3 V
--5mA
Power-down mode / Halt,
V
DD
= 3.0 to 3.6 V
--50µA
V
prog
Programming voltage -2-3.6V
1. Guaranteed by design, not tested in production.
Table 29. Flash memory endurance and data retention
Symbol Parameter Conditions
Value
Unit
Min
(1)
1. Based on characterization, not tested in production.
Typ Max
N
END
Endurance
T
A
= –40 to +85 °C (6 suffix versions)
T
A
= –40 to +105 °C (7 suffix versions)
10
--
kcycles
t
RET
Data retention
1 kcycle
(2)
at T
A
= 85 °C
2. Cycling performed over the whole temperature range.
30 - -
Years1 kcycle
(2)
at T
A
= 105 °C 10 - -
10 kcycles
(2)
at T
A
= 55 °C 20 - -
Table 28. Flash memory characteristics (continued)
Symbol Parameter Conditions Min
(1)
Typ Max
(1)
Unit