Datasheet

Electrical characteristics STM32F100xC, STM32F100xD, STM32F100xE
54/105 DocID15081 Rev 8
5.3.8 PLL characteristics
The parameters given in Table 27 are derived from tests performed under the ambient
temperature and V
DD
supply voltage conditions summarized in Table 9.
5.3.9 Memory characteristics
Flash memory
The characteristics are given at T
A
= –40 to 105 °C unless otherwise specified.
1. The wakeup times are measured from the wakeup event to the point at which the user application code
reads the first instruction.
Table 27. PLL characteristics
Symbol Parameter
Value
Unit
Min
(1)
Typ Max
(1)
1. Based on device characterization, not tested in production.
f
PLL_IN
PLL input clock
(2)
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by f
PLL_OUT
.
18.024MHz
PLL input clock duty cycle 40 60 %
f
PLL_OUT
PLL multiplier output clock 16 24 MHz
t
LOCK
PLL lock time 200 µs
Jitter Cycle-to-cycle jitter 300 ps
Table 28. Flash memory characteristics
Symbol Parameter Conditions Min
(1)
1. Guaranteed by design, not tested in production.
Typ Max
(1)
Unit
t
prog
16-bit programming time T
A
= –40 to +105 °C 40 52.5 70 µs
t
ERASE
Page (2 KB) erase time T
A
= –40 to +105 °C 20 40 ms
t
ME
Mass erase time T
A
= –40 to +105 °C 20 40 ms
I
DD
Supply current
Read mode
f
HCLK
= 24 MHz, V
DD
= 3.3 V
20 mA
Write / Erase modes
f
HCLK
= 24 MHz, V
DD
= 3.3 V
5mA
Power-down mode / Halt,
V
DD
= 3.0 to 3.6 V
50 µA
V
prog
Programming voltage 2 3.6 V