Datasheet

DocID15081 Rev 8 53/105
STM32F100xC, STM32F100xD, STM32F100xE Electrical characteristics
104
High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
Wakeup time from low-power mode
The wakeup times given in Table 26 are measured on a wakeup phase with an 8-MHz HSI
RC oscillator. The clock source used to wake up the device depends from the current
operating mode:
• Stop or Standby mode: the clock source is the RC oscillator
• Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under the ambient temperature and V
DD
supply
voltage conditions summarized in Table 9.
Table 24. HSI oscillator characteristics
(1)
1. V
DD
= 3.3 V, T
A
= –40 to 105 °C °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
f
HSI
Frequency 8 MHz
ACC
HSI
Accuracy of HSI oscillator
T
A
= –40 to 105 °C
(2)
2. Based on characterization, not tested in production.
-2.4 2.5 %
T
A
= –10 to 85 °C
(2)
-2.2 1.3 %
T
A
= 0 to 70 °C
(2)
-1.9 1.3 %
T
A
= 25 °C -1 1 %
t
su(HSI)
(3)
3. Guaranteed by design. Not tested in production
HSI oscillator startup time 1 2 µs
I
DD(HSI)
(3)
HSI oscillator power consumption 80 100 µA
Table 25. LSI oscillator characteristics
(1)
1. V
DD
= 3 V, T
A
= –40 to 105 °C °C unless otherwise specified.
Symbol Parameter Min Typ Max Unit
f
LSI
Frequency 30 40 60 kHz
t
su(LSI)
(2)
2. Guaranteed by design, not tested in production.
LSI oscillator startup time 85 µs
I
DD(LSI)
(2)
LSI oscillator power consumption 0.65 1.2 µA
Table 26. Low-power mode wakeup timings
Symbol Parameter Typ Unit
t
WUSLEEP
(1)
Wakeup from Sleep mode 1.8 µs
t
WUSTOP
(1)
Wakeup from Stop mode (regulator in run mode) 3.6
µs
Wakeup from Stop mode (regulator in low-power mode) 5.4
t
WUSTDBY
(1)
Wakeup from Standby mode 50 µs