Datasheet

Electrical characteristics STM32F091xB STM32F091xC
56/128 DocID026284 Rev 4
6.3.4 Embedded reference voltage
The parameters given in Table 28 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 24: General operating
conditions.
6.3.5 Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 14: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to CoreMark code.
V
PVD6
PVD threshold 6
Rising edge 2.66 2.78 2.9 V
Falling edge 2.56 2.68 2.8 V
V
PVD7
PVD threshold 7
Rising edge 2.76 2.88 3 V
Falling edge 2.66 2.78 2.9 V
V
PVDhyst
(1)
PVD hysteresis - - 100 - mV
I
DD(PVD)
PVD current consumption - - 0.15 0.26
(1)
µA
1. Guaranteed by design, not tested in production.
Table 27. Programmable voltage detector characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
Table 28. Embedded internal reference voltage
Symbol Parameter Conditions Min Typ Max Unit
V
REFINT
Internal reference voltage –40 °C < T
A
< +105 °C 1.2 1.23 1.25 V
t
START
ADC_IN17 buffer startup
time
---10
(1)
µs
t
S_vrefint
ADC sampling time when
reading the internal
reference voltage
-
4
(1)
1. Guaranteed by design, not tested in production.
-- µs
V
REFINT
Internal reference voltage
spread over the
temperature range
V
DDA
= 3 V - -
10
(1)
mV
T
Coeff
Temperature coefficient -
- 100
(1)
-
100
(1)
ppm/°C
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