Datasheet

Electrical characteristics STM32F070xB STM32F070x6
42/88 DocID027114 Rev 2
6.3.3 Embedded reset and power control block characteristics
The parameters given in Table 23 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions.
6.3.4 Embedded reference voltage
The parameters given in Table 24 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions.
6.3.5 Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 10: Current consumption
measurement scheme.
Table 23. Embedded reset and power control block characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
POR/PDR
(1)
1. The PDR detector monitors V
DD
and also V
DDA
(if kept enabled in the option bytes). The POR detector
monitors only V
DD
.
Power on/power down
reset threshold
Falling edge
(2)
2. The product behavior is guaranteed by design down to the minimum V
POR/PDR
value.
1.80 1.88
1.96
(3)
3. Data based on characterization results, not tested in production.
V
Rising edge 1.84
(3)
1.92 2.00 V
V
PDRhyst
PDR hysteresis - 40 - mV
t
RSTTEMPO
(4)
4. Guaranteed by design, not tested in production.
Reset temporization 1.50 2.50 4.50 ms
Table 24. Embedded internal reference voltage
Symbol Parameter Conditions Min Typ Max Unit
V
REFINT
Internal reference voltage –40 °C < T
A
< +85 °C 1.16 1.2 1.24
(1)
1. Data based on characterization results, not tested in production.
V
t
S_vrefint
ADC sampling time when
reading the internal
reference voltage
4
(2)
2. Guaranteed by design, not tested in production.
-- μs
ΔV
REFINT
Internal reference voltage
spread over the
temperature range
V
DDA
= 3 V - -
10
(2)
mV
T
Coeff
Temperature coefficient
- 100
(2)
-
100
(2)
ppm/°C
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