Datasheet

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STM32F031x4 STM32F031x6 Electrical characteristics
80
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in
Figure 20 for standard I/Os, and in Figure 21 for
5 V-tolerant I/Os. The following curves are design simulation results, not tested in
production.
R
PU
Weak pull-up
equivalent resistor
(3)
V
IN
= V
SS
25 40 55 k
R
PD
Weak pull-down
equivalent
resistor
(3)
V
IN
= - V
DDIOx
25 40 55 k
C
IO
I/O pin capacitance - - 5 - pF
1. Data based on design simulation only. Not tested in production.
2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 45:
I/O current injection susceptibility.
3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
Table 46. I/O static characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
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