Datasheet

Electrical characteristics STM32F030x4/x6/x8/xC
62/93 DS9773 Rev 4
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in
Figure 19 for standard I/Os, and in Figure 20 for
5 V tolerant I/Os. The following curves are design simulation results, not tested in
production.
I
lkg
Input leakage
current
(2)
TC, FT and FTf I/O
TTa in digital mode
V
SS
≤ V
IN
≤ V
DDIOx
--± 0.1
µA
TTa in digital mode
V
DDIOx
≤ V
IN
≤ V
DDA
--1
TTa in analog mode
V
SS
≤ V
IN
≤ V
DDA
--± 0.2
FT and FTf I/O
(3)
V
DDIOx
≤ V
IN
≤ 5 V
--10
R
PU
Weak pull-up
equivalent resistor
(4)
V
IN
= V
SS
25 40 55 kΩ
R
PD
Weak pull-down
equivalent
resistor
(4)
V
IN
= V
DDIOx
25 40 55 kΩ
C
IO
I/O pin capacitance - - 5 - pF
1. Data based on design simulation only. Not tested in production.
2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 45:
I/O current injection susceptibility.
3. To sustain a voltage higher than V
DDIOx
+ 0.3 V, the internal pull-up/pull-down resistors must be disabled.
4. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
Table 46. I/O static characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit