Datasheet

DS9773 Rev 4 57/93
STM32F030x4/x6/x8/xC Electrical characteristics
75
6.3.9 PLL characteristics
The parameters given in Table 38 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions.
6.3.10 Memory characteristics
Flash memory
The characteristics are given at T
A
= -40 to 85 °C unless otherwise specified.
t
su(LSI)
(2)
LSI oscillator startup time - - 85 µs
I
DDA(LSI)
(2)
LSI oscillator power consumption - 0.75 - µA
1. V
DDA
= 3.3 V, T
A
= -40 to 85 °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
Table 37. LSI oscillator characteristics
(1)
Symbol Parameter Min Typ Max Unit
Table 38. PLL characteristics
Symbol Parameter
Value
Unit
Min Typ Max
f
PLL_IN
PLL input clock
(1)
1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible with the
range defined by f
PLL_OUT
.
1
(2)
8.0 24
(2)
MHz
PLL input clock duty cycle 40
(2)
-60
(2)
%
f
PLL_OUT
PLL multiplier output clock 16
(2)
-48MHz
t
LOCK
PLL lock time - - 200
(2)
2. Guaranteed by design, not tested in production.
µs
Jitter
PLL
Cycle-to-cycle jitter - - 300
(2)
ps
Table 39. Flash memory characteristics
Symbol Parameter Conditions Min Typ Max
(1)
1. Guaranteed by design, not tested in production.
Unit
t
prog
16-bit programming time T
A
= -40 to +85 °C - 53.5 - µs
t
ERASE
Page erase time
(2)
2. Page size is 1KB for STM32F030x4/6/8 devices and 2KB for STM32F030xC devices
T
A
= -40 to +85 °C - 30 - ms
t
ME
Mass erase time T
A
= -40 to +85 °C - 30 - ms
I
DD
Supply current
Write mode - - 10 mA
Erase mode - - 12 mA
V
prog
Programming voltage - 2.4 - 3.6 V