Datasheet

Electrical characteristics STM32F030x4/x6/x8/xC
46/93 DS9773 Rev 4
6.3.4 Embedded reference voltage
The parameters given in Table 24 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions.
6.3.5 Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 14: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to CoreMark code.
V
PDRhyst
PDR hysteresis - - 40 - mV
t
RSTTEMPO
(4)
Reset temporization - 1.50 2.50 4.50 ms
1. The PDR detector monitors V
DD
and also V
DDA
(if kept enabled in the option bytes). The POR detector
monitors only V
DD
.
2. The product behavior is guaranteed by design down to the minimum V
POR/PDR
value.
3. Data based on characterization results, not tested in production.
4. Guaranteed by design, not tested in production.
Table 23. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
Table 24. Embedded internal reference voltage
Symbol Parameter Conditions Min Typ Max Unit
V
REFINT
Internal reference
voltage
-40°C < T
A
< +85°C 1.2 1.23 1.25 V
t
START
ADC_IN17 buffer startup
time
---10
(1)
µs
t
S_vrefint
ADC sampling time when
reading the internal
reference voltage
-
4
(1)
--µs
ΔV
REFINT
Internal reference
voltage spread over the
temperature range
V
DDA
= 3 V - -
10
(1)
1. Guaranteed by design, not tested in production.
mV
T
Coeff
Temperature coefficient -
-100
(1)
-
100
(1)
ppm/°C