Datasheet

DS9773 Rev 4 45/93
STM32F030x4/x6/x8/xC Electrical characteristics
75
6.3.2 Operating conditions at power-up / power-down
The parameters given in Table 22 are derived from tests performed under the ambient
temperature condition summarized in Table 21.
6.3.3 Embedded reset and power control block characteristics
The parameters given in Table 23 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions.
V
DDA
Analog operating voltage
Must have a potential equal
to or higher than V
DD
2.4 3.6 V
V
IN
I/O input voltage
TC and RST I/O -0.3 V
DDIOx
+0.3
V
TTa I/O -0.3 V
DDA
+0.3
(2)
FT and FTf I/O -0.3 5.5
(2)
BOOT0 0 5.5
P
D
Power dissipation at T
A
= 85 °C
for suffix 6
(1)
LQFP64 - 455
mW
LQFP48 - 364
LQFP32 - 357
TSSOP20 - 263
T
A
Ambient temperature for the
suffix 6 version
Maximum power dissipation -40 85
°C
Low power dissipation
(2)
-40 105
T
J
Junction temperature range Suffix 6 version -40 105 °C
1. If T
A
is lower, higher P
D
values are allowed as long as T
J
does not exceed T
Jmax
.
2. In low power dissipation state, T
A
can be extended to this range as long as T
J
does not exceed T
Jmax
(see Section 7.5:
Thermal characteristics).
Table 21. General operating conditions (continued)
Symbol Parameter Conditions Min Max Unit
Table 22. Operating conditions at power-up / power-down
Symbol Parameter Conditions Min Max Unit
t
VDD
V
DD
rise time rate
-
0
∞
µs/V
V
DD
fall time rate 20
∞
t
VDDA
V
DDA
rise time rate
-
0
∞
V
DDA
fall time rate 20
∞
Table 23. Embedded reset and power control block characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
POR/PDR
(1)
Power on/power down
reset threshold
Falling edge
(2)
1.80 1.88
1.96
(3)
V
Rising edge 1.84
(3)
1.92 2.00 V