Datasheet

Electrical characteristics
STGB10NC60KDT4, STGD10NC60KDT4,
STGF10NC60KD, STGP10NC60KD
4/30
DocID11423 Rev 7
2 Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)CES
Collector-emitter breakdown
voltage
I
C
= 1 mA, V
GE
= 0 V
600
V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
=15 V, I
C
= 5 A
2.2
2.5
V
V
GE
= 15 V, I
C
= 5 A,
T
j
= 125 °C
1.8
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 250 µA
4.5
6.5
V
I
CES
Collector cut-off current
V
CE
= 600 V, V
GE
= 0 V
150
µA
V
CE
=600 V, V
GE
= 0 V,
T
j
= 125 °C
(1)
1
mA
I
GES
Gate-emitter leakage
current
V
GE
= ±20 V
±100
nA
g
fs
(2)
Forward transconductance
V
CE
= 15 V, I
C
= 5 A
15
S
Notes:
(1)
Defined by design, not subject to production test.
(2)
Pulse test: pulse duration < 300 μs, duty cycle < 2 %.
Table 5: Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0 V
-
380
-
pF
C
oes
Output capacitance
-
46
-
C
res
Reverse transfer
capacitance
-
8.5
-
Q
g
Total gate charge
V
CE
= 390 V, I
C
= 5 A,
V
GE
= 0 to 15 V
(see Figure 19: " Gate charge
test circuit")
-
19
-
nC
Q
ge
Gate-emitter charge
-
5
-
Q
gc
Gate-collector charge
-
9
-