Datasheet

STGB10NC60KDT4, STGD10NC60KDT4,
STGF10NC60KD, STGP10NC60KD
Electrical ratings
DocID11423 Rev 7
3/30
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbo
l
Parameter
Value
Unit
D²PAK,
TO-220
DPAK
TO-220FP
V
CES
Collector-emitter voltage (V
GE
= 0 V)
600
V
I
C
(1)
Continuous collector current at T
C
= 25 °C
20
9
A
Continuous collector current at T
C
= 100 °C
10
6
A
I
CL
(2)
Turn-off latching current
30
A
I
CP
(3)
Pulsed collector current
30
A
V
GE
Gate-emitter voltage
±20
V
I
F
Diode RMS forward current at Tc=25°C
10
A
I
FSM
Surge non repetitive forward current t
p
= 10
ms sinusoidal
20
A
P
TOT
Total dissipation at T
C
= 25 °C
65
62
25
W
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
C
=25 °C)
2500
V
t
scw
Short-circuit withstand time V
CE
= 0.5 V
CES
,
T
j
= 125 °C, R
G
= 10 Ω, V
GE
= 12 V
10
μs
T
stg
Storage temperature range
- 55 to 150
°C
T
J
Operating junction temperature range
Notes:
(1)
Calculated according to the iterative formula:
(2)
V
clamp
= 80 % V
CES
, V
GE
= 15 V, R
G
= 10 Ω, T
J
= 150 °C.
(3)
Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
TO-220, D²PAK
DPAK
TO-220FP
R
thj-case
Thermal resistance junction-case IGBT
1.9
2
5
°C/W
R
thj-case
Thermal resistance junction-case diode
4
4.5
7
R
thj-amb
Thermal resistance junction-ambient
62.5
100
62.5