Datasheet

Electrical characteristics
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
4/29
DocID9565 Rev 7
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5: On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
V
GS
= 0 V, I
D
= 1 mA
800
V
I
DSS
Zero gate voltage drain
current
V
GS
= 0 V, V
DS
= 800 V
1
µA
V
GS
= 0 V, V
DS
= 800 V,
T
C
= 125 °C
(1)
50
µA
I
GSS
Gate-body leakage current
V
DS
= 0 V, V
GS
= ±20 V
±10
µA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 50 µA
3
3.75
4.5
V
R
DS(on)
Static drain-source
on- resistance
V
GS
= 10 V, I
D
= 1.25 A
3.8
4.5
Ω
Notes:
(1)
Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
GS
= 0 V, V
DS
= 25 V,
f = 1 MHz
-
485
-
pF
C
oss
Output capacitance
-
57
-
pF
C
rss
Reverse transfer capacitance
-
11
-
pF
C
oss eq
(1)
Equivalent output capacitance
V
GS
= 0 V, V
DS
= 0 to 640 V
-
22
-
pF
Q
g
Total gate charge
V
DD
= 640 V, I
D
= 2.5 A,
V
GS
= 0 to 10 V
(see Figure 17: "Test circuit
for gate charge behavior")
-
19
-
nC
Q
gs
Gate-source charge
-
3.2
-
nC
Q
gd
Gate-drain charge
-
10.8
-
nC
Notes:
(1)
C
oss eq
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
DD
= 400 V, I
D
= 1.25 A, R
G
= 4.7
Ω, V
GS
=10 V
(see Figure 16: "Test circuit for
resistive load switching times" and
Figure 21: "Switching time
waveform")
-
17
-
ns
t
r
Rise time
-
27
-
ns
t
d(off)
Turn-off delay time
-
36
-
ns
t
f
Fall time
-
40
-
ns