Datasheet

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Electrical ratings
DocID9565 Rev 7
3/29
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220,
DPAK,
IPAK
TO-220FP
V
DS
Drain-source voltage
800
V
V
GS
Gate-source voltage
±30
V
I
D
Drain current (continuous) at T
C
= 25 °C
2.5
2.5
(1)
A
Drain current (continuous) at T
C
= 100 °C
1.57
1.57
(1)
A
I
DM
(2)
Drain current (pulsed)
10
10
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C
70
25
W
ESD
Gate-source, human body model,
R = 1.5 kΩ, C = 100 pF
2
kV
dv/dt
(3)
Peak diode recovery voltage slope
4.5
V/ns
V
ISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s, T
C
= 25 °C)
2.5
kV
T
stg
Storage temperature range
-55 to 150
°C
T
j
Operation junction temperature range
Notes:
(1)
This value is limited by package.
(2)
Pulse width is limited by safe operating area.
(3)
I
SD
≤ 2.5 A, di/dt ≤ 200 A/μs, V
DS(peak)
< V
(BR)DSS
, V
DD
= 640 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
TO-220
TO-220FP
DPAK
IPAK
R
thj-case
Thermal resistance junction-case
1.78
5
1.78
°C/W
R
thj-amb
Thermal resistance junction-ambient
62.5
100
°C/W
R
thj-pcb
(1)
Thermal resistance junction-pcb
50
°C/W
Notes:
(1)
When mounted on FR-4 board of 1 inch², 2 oz Cu.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
I
AR
Avalanche current, repetitive or non-repetitive
(pulse width limited by T
J max
)
2.5
A
E
AS
Single pulse avalanche energy (starting T
J
=25 °C, I
D
= I
AR
, V
DD
= 50 V)
170
mJ