Datasheet

STE53NC50
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Rthj-case Thermal Resistance Junction-case Max 0.272 °C/W
Rthc-h Thermal Resistance Case-heatsink with Conductive
Grease Applied
0.05 °C/W
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
53 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
1043 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0 500 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
10 µA
V
DS
= Max Rating, T
C
= 125 °C
100 µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 30V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
234V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 27A
0.07 0.08 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 15 A
42 S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
11.2 nF
C
oss
Output Capacitance 1350 pF
C
rss
Reverse Transfer
Capacitance
115 pF