Datasheet

1/10July 2002
STD30NF06L
N-CHANNEL 60V - 0.022- 35A DPAK/IPAK
STripFET™ POWER MOSFET
(1) I
SD
38A, di/dt 400As, V
DD
V
(BR)DSS
, T
j
T
JMAX.
TYPICAL R
DS
(on) = 0.022
EXCEPTIONAL dv/dt CAPABILITY
LOGIC LEVEL GATE DRIVE
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
ADD SUFFIX “-1” FOR ORDERING IN IPAK
CHARACTERIZATION ORIENTED FOR
AUTOMOTIVE APPLICATIONS
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size
™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
() Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
STD30NF06L 60 V <0.028 35 A
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60 V
V
DGR
Drain-gate Voltage (R
GS
= 20 k)
60 V
V
GS
Gate- source Voltage ± 20 V
I
D
Drain Current (continuous) at T
C
= 25°C
35 A
I
D
Drain Current (continuous) at T
C
= 100°C
25 A
I
DM
(
l
)
Drain Current (pulsed) 140 A
P
TOT
Total Dissipation at T
C
= 25°C
70 W
Derating Factor 0.46 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 25 V/ns
T
stg
Storage Temperature
– 55 to 175 °C
T
j
Operating Junction Temperature
DPAK
3
2
1
1
3
IPAK
INTERNAL SCHEMATIC DIAGRAM

Summary of content (10 pages)