Datasheet

ST7LITE0xY0, ST7LITESxY0
92/124
13.6 MEMORY CHARACTERISTICS
T
A
= -40°C to 105°C, unless otherwise specified
13.6.1 RAM and Hardware Registers
13.6.2 FLASH Program Memory
13.6.3 EEPROM Data Memory
Notes:
1. Minimum V
DD
supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Up to 32 bytes can be programmed at a time.
3. The data retention time increases when the T
A
decreases.
4. Data based on reliability test results and monitored in production.
5. Data based on characterization results, not tested in production.
6. Guaranteed by Design. Not tested in production.
7. Design target value pending full product characterization.
Symbol Parameter Conditions Min Typ Max Unit
V
RM
Data retention mode
1)
HALT mode (or RESET) 1.6 V
Symbol Parameter Conditions Min Typ Max Unit
V
DD
Operating voltage for Flash write/erase
2.4 5.5
V
t
prog
Programming time for 1~32 bytes
2)
T
A
=−40 to +105°C 5 10
ms
Programming time for 1.5 kBytes
T
A
=+25°C 0.24 0.48
s
t
RET
Data retention
4)
T
A
=+55°C
3)
20 years
N
RW
Write erase cycles T
A
=+25°C 10K
7)
cycles
I
DD
Supply current
Read / Write / Erase
modes
f
CPU
= 8MHz, V
DD
= 5.5V
2.6
6)
mA
No Read/No Write Mode 100 µA
Power down mode / HALT 0 0.1 µA
Symbol Parameter Conditions Min Typ Max Unit
V
DD
Operating voltage for EEPROM
write/erase
2.4 5.5
V
t
prog
Programming time for 1~32 bytes
T
A
=−40 to +105°C 5 10
ms
t
ret
Data retention
4)
T
A
=+55°C
3)
20 years
N
RW
Write erase cycles T
A
=+25°C 300K
7)
cycles
1