Datasheet

Symbol Parameter
Test
conditions
Min. Typ. Max. Unit
F
PWM
PWM signal
frequency
70 100 130 kHz
V
REF
Internal V
CTRL
reference
voltage
V
OUT
≥ 1.8 V,
V
CTRL
increasing
1.2 1.25 1.3 V
V
ICTRL
Sensing current
offset
I
CTRL+
- I
CTRL-
decreasing
40 50 60 mV
XSHUT
XSHUT logic
low
XSHUT
increasing
0.27 0.34
V
XSHUT logic
High
XSHUT
decreasing
0.14 0.24
Thermal shutdown
T
shutdown
Overtemperatur
e threshold for
turn OFF
Temperature
increasing
155
°C
Overtemperatur
e threshold for
turn ON
Temperature
decreasing
130
1. According to the absolute maximum ratings the output charge voltage cannot be above 4.8 V but if a higher VOUT up to 5.2
V is needed, a Schottky diode must be placed between the L
x
and VOUT pins as shown in Figure 1. In such way the
Schottky diode in parallel to the embedded P-channel MOSFET reduces the voltage drop between the VLX pin and the
VOUT pin determined by the body diode when the internal PMOS is OFF from 0.7 V down to 0.3 V.
2. Given T
j
= T
a
+ R
thJA
x P
D
, and assuming R
thJA
= 135 °C/W, and that in order to avoid device destruction T
jmax
must be ≤
125 °C, and that in the worst conditions T
A
= 85 °C, the power dissipated inside the device is given by: P
D
≤ T
J
-T
A
/
R
thJA
=295 mW. Therefore, if in the worst case the efficiency is assumed to be 90%, then P
IN-MAX
= 3.3 W and P
OUT-MAX
= 3
W.
SPV1040
Electrical characteristics
DS6991 - Rev 8
page 6/17