Datasheet

P01xxxA
3/5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.2
0.4
0.6
0.8
1
P(W)
360
O
=180
o
= 120
o
=90
o
=60
o
=30
o
DC
I(A)
T(AV)
Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
0 20406080100120140
0
0.2
0.4
0.6
0.8
1
P (W) Ttab ( C)
o
Rth(j-a)
Tamb ( C)
o
-115
-100
-95
-120
-105
-125
-110
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Ttab).
0 102030405060708090100110120130
0
0.2
0.4
0.6
0.8
1
I (A)
T(AV)
=180
o
DC
Tamb ( C)
o
Fig.3 : Average on-state current versus tab tem-
perature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00
Zth(j-a)/Rth(j-a)
tp(s)
Standard foot print , e(Cu)=35
m
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration.
Igt
Ih
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-40 -20 0 20 40 60 80 100 120 140
Igt[Tj]
Igt[Tj=25 C]
o
Ih[Tj]
Ih[Tj=25 C]
o
Tj( C)
o
Fig.5 : Relative variation of gate trigger current
and holding current versus junction temperature.
1 10 100 1,000
0
1
2
3
4
5
6
7
8
Tj initial = 25 C
o
Number of cycles
I(A)
TSM
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.