Datasheet

P01xxxA
P
G (AV)
= 0.1 W P
GM
=2W(tp=20µs) I
GM
=1A(tp=20µs)
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth(j-a)
Junction to ambient
150 °C/W
Rth(j-l)
Junction to leads for DC
80 °C/W
THERMAL RESISTANCES
Symbol Test Conditions
SENSITIVITY
Unit
09 02 11 18 15
I
GT
V
D
=12V (DC) R
L
=140Ω
Tj= 25°C MIN 4 0.5 15 µA
MAX 1 200 25 5 50
V
GT
V
D
=12V (DC) R
L
=140Ω
Tj= 25°C MAX 0.8 V
V
GD
V
D
=V
DRM
R
L
=3.3kΩ
R
GK
=1KΩ
Tj= 125°C MIN 0.1 V
V
GRM
I
RG
=10µA
Tj= 25°C MIN 8 V
tgd
V
D
=V
DRM
I
TM
=3xI
T(AV
)
dI
G
/dt = 0.1A/µsI
G
= 10mA
Tj= 25°C TYP 0.5 µs
I
H
I
T
= 50mA R
GK
=1KΩ
Tj= 25°C MAX 5 7 mA
I
L
I
G
=1mA R
GK
=1KΩ
Tj= 25°C MAX 6 8 mA
V
TM
I
TM
= 1.6A tp= 380µs
Tj= 25°C MAX 1.95 V
I
DRM
I
RRM
V
D
=V
DRM
R
GK
=1KΩ
V
R
=V
RRM
Tj= 25°C MAX B/D:1-M:10 µA
Tj= 125°C MAX 100 µA
dV/dt
V
D
= 67%V
DRM
R
GK
=1KΩ
Tj= 125°C MIN 50 75 80 75 100 V/µs
tq
I
TM
=3xI
T(AV
)V
R
=35V
dI/dt=10A/µs tp=100µs
dV/dt=10V/µs
V
D
= 67%V
DRM
R
GK
=1KΩ
Tj= 125°C MAX 200 µs
ELECTRICAL CHARACTERISTICS
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