Datasheet

ManualsBrandsST ManualsEEPROMEEPROM 64 x 16 Bit/128 x 8 Bit SO-8

October 2011 Doc ID 4997 Rev 12 1/34

M93C86, M93C76, M93C66

M93C56, M93C46

16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide)

MICROWIRE® serial access EEPROM

Features

■ Industry standard MICROWIRE bus

■ Single supply voltage:

– 4.5 V to 5.5 V for M93Cx6

– 2.5 V to 5.5 V for M93Cx6-W

– 1.8 V to 5.5 V for M93Cx6-R

■ Dual organization: by word (x16) or byte (x8)

■ Programming instructions that work on: byte,

word or entire memory

■ Self-timed programming cycle with auto-erase:

5 ms

■ READY/BUSY signal during programming

■ 2 MHz clock rate

■ Sequential read operation

■ Enhanced ESD/latch-up behavior

■ More than 1 million write cycles

■ More than 40 year data retention

■ Packages

– SO8, TSSOP8, UFDFPN8 packages:

RoHS-compliant and Halogen-free

(ECOPACK2®)

– PDIP8 package:

RoHS-compliant (ECOPACK1®)

PDIP8 (BN)

SO8 (MN)

150 mil width

TSSOP8 (DW)

169 mil width

UFDFPN8 (MB or MC)

2 x 3 mm (MLP)

Table 1. Device summary

Part

number

Memory

size

Supply

voltage

Part

number

Memory

size

Supply

voltage

Part

number

Memory

size

Supply

voltage

M93C46

1 Kbit

4.5 V to 5.5 V M93C66

4 Kbits

4.5 V to 5.5 V M93C86

16 Kbits

4.5 V to 5.5 V

M93C46-W 2.5 V to 5.5 V M93C66-W 2.5 V to 5.5 V M93C86-W 2.5 V to 5.5 V

M93C56

2 Kbits

4.5 V to 5.5 V M93C66-R 1.8 V to 5.5 V

M93C56-W 2.5 V to 5.5 V M93C76-W

8 Kbits

2.5 V to 5.5 V

M93C56-R 1.8 V to 5.5 V M93C76-R 1.8 V to 5.5 V

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Summary of content (34 pages)

PAGE 1
M93C86, M93C76, M93C66 M93C56, M93C46 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM Features ■ Industry standard MICROWIRE bus ■ Single supply voltage: – 4.5 V to 5.5 V for M93Cx6 – 2.5 V to 5.5 V for M93Cx6-W – 1.8 V to 5.
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Contents M93C46, M93C56, M93C66, M93C76, M93C86 Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Connecting to the serial bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Operating features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1 Supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1.
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M93C46, M93C56, M93C66, M93C76, M93C86 List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Table 25. Table 26. Table 27. Table 28. Table 29. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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List of figures M93C46, M93C56, M93C66, M93C76, M93C86 List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. 4/34 Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DIP, SO, TSSOP and MLP connections (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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M93C46, M93C56, M93C66, M93C76, M93C86 1 Description Description The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are electrically erasable programmable memory (EEPROM) devices accessed through the MICROWIRE bus protocol. M93Cx6 devices operate within a voltage supply range from 4.5 V to 5.5 V, M93Cx6-W devices operate within a voltage supply range from 2.5 V to 5.5 V and M93Cx6-R devices operate within a voltage supply range from 1.8 V to 5.5 V.
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Description M93C46, M93C56, M93C66, M93C76, M93C86 The M93Cx6 is accessed by a set of instructions, as summarized in Table 4, and in more detail in Table 5: Instruction set for the M93C46 to Table 7: Instruction set for the M93C76 and M93C86). Table 4.
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M93C46, M93C56, M93C66, M93C76, M93C86 2 Connecting to the serial bus Connecting to the serial bus Figure 3 shows an example of three memory devices connected to an MCU, on a serial bus. Only one device is selected at a time, so only one device drives the Serial Data output (Q) line at a time, the other devices are high impedance. The pull-down resistor R (represented in Figure 3) ensures that no device is selected if the bus master leaves the S line in the high impedance state.
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Operating features M93C46, M93C56, M93C66, M93C76, M93C86 3 Operating features 3.1 Supply voltage (VCC) 3.1.1 Operating supply voltage (VCC) Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage within the specified [VCC(min), VCC(max)] range must be applied. In order to secure a stable DC supply voltage, it is recommended to decouple the VCC line with a suitable capacitor (usually of the order of 10 nF to 100 nF) close to the VCC/VSS package pins.
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M93C46, M93C56, M93C66, M93C76, M93C86 4 Memory organization Memory organization The M93Cx6 memory is organized either as bytes (x8) or as words (x16). If Organization Select (ORG) is left unconnected (or connected to VCC) the x16 organization is selected; when Organization Select (ORG) is connected to Ground (VSS) the x8 organization is selected. When the M93Cx6 is in Standby mode, Organization Select (ORG) should be set either to VSS or VCC for minimum power consumption.
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Instructions 5 M93C46, M93C56, M93C66, M93C76, M93C86 Instructions The instruction set of the M93Cx6 devices contains seven instructions, as summarized in Table 5 to Table 7. Each instruction consists of the following parts, as shown in Figure 4: READ, WRITE, WEN, WDS sequences: ● Each instruction is preceded by a rising edge on Chip Select Input (S) with Serial Clock (C) being held low. ● A start bit, which is the first ‘1’ read on Serial Data Input (D) during the rising edge of Serial Clock (C).
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M93C46, M93C56, M93C66, M93C76, M93C86 Table 6.
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Instructions 5.1 M93C46, M93C56, M93C66, M93C76, M93C86 Read Data from Memory The Read Data from Memory (READ) instruction outputs data on Serial Data Output (Q). When the instruction is received, the op-code and address are decoded, and the data from the memory is transferred to an output shift register. A dummy 0 bit is output first, followed by the 8-bit byte or 16-bit word, with the most significant bit first. Output data changes are triggered by the rising edge of Serial Clock (C).
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M93C46, M93C56, M93C66, M93C76, M93C86 Figure 4. Read Instructions READ, WRITE, WEN, WDS sequences S D 1 1 0 An A0 Qn Q ADDR Q0 DATA OUT OP CODE Write S CHECK STATUS D 1 0 1 An A0 Dn D0 Q ADDR DATA IN BUSY READY OP CODE Write Enable S D Write Disable 1 0 0 1 1 Xn X0 S D OP CODE 1 0 0 0 0 Xn X0 OP CODE AI00878d 1. For the meanings of An, Xn, Qn and Dn, see Table 5, Table 6 and Table 7. 5.
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Instructions 5.4 M93C46, M93C56, M93C66, M93C76, M93C86 Write For the Write Data to Memory (WRITE) instruction, 8 or 16 data bits follow the op-code and address bits. These form the byte or word that is to be written. As with the other bits, Serial Data Input (D) is sampled on the rising edge of Serial Clock (C). After the last data bit has been sampled, the Chip Select Input (S) must be taken low before the next rising edge of Serial Clock (C).
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M93C46, M93C56, M93C66, M93C76, M93C86 5.6 Instructions Write All As with the Erase All Memory (ERAL) instruction, the format of the Write All Memory with same Data (WRAL) instruction requires that a dummy address be provided. As with the Write Data to Memory (WRITE) instruction, the format of the Write All Memory with same Data (WRAL) instruction requires that an 8-bit data byte, or 16-bit data word, be provided. This value is written to all the addresses of the memory device.
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READY/BUSY status 6 M93C46, M93C56, M93C66, M93C76, M93C86 READY/BUSY status While the Write or Erase cycle is underway, for a WRITE, ERASE, WRAL or ERAL instruction, the Busy signal (Q=0) is returned whenever Chip Select input (S) is driven high. (Please note, though, that there is an initial delay, of tSLSH, before this status information becomes available). In this state, the M93Cx6 ignores any data on the bus.
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M93C46, M93C56, M93C66, M93C76, M93C86 9 Clock pulse counter Clock pulse counter In a noisy environment, the number of pulses received on Serial Clock (C) may be greater than the number delivered by the master (the microcontroller). This can lead to a misalignment of the instruction of one or more bits (as shown in Figure 7) and may lead to the writing of erroneous data at an erroneous address.
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Maximum rating 10 M93C46, M93C56, M93C66, M93C76, M93C86 Maximum rating Stressing the device above the rating listed in the absolute maximum ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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M93C46, M93C56, M93C66, M93C76, M93C86 11 DC and AC parameters DC and AC parameters This section summarizes the operating and measurement conditions, and the dc and ac characteristics of the device. The parameters in the dc and ac characteristic tables that follow are derived from tests performed under the measurement conditions summarized in the relevant tables. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters.
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DC and AC parameters M93C46, M93C56, M93C66, M93C76, M93C86 AC measurement conditions (M93Cx6-W and M93Cx6-R)(1) Table 13. Symbol Parameter CL Min. Load capacitance Max. Unit 100 pF Input rise and fall times 50 ns Input pulse voltages 0.2VCC to 0.8VCC V Input timing reference voltages 0.3VCC to 0.7VCC V Output timing reference voltages 0.3VCC to 0.7VCC V 1. Output Hi-Z is defined as the point where data out is no longer driven. Figure 8. AC testing input output waveforms M93CXX 2.
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M93C46, M93C56, M93C66, M93C76, M93C86 Table 16. Symbol DC and AC parameters DC characteristics (M93Cx6, device grade 3) Parameter Test condition Min. Max. Unit 0V ≤VIN ≤VCC ±2.5 µA 0V ≤VOUT ≤VCC, Q in Hi-Z ±2.
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DC and AC parameters Table 18. Symbol M93C46, M93C56, M93C66, M93C76, M93C86 DC characteristics (M93Cx6-W, device grade 3) Parameter ILI Input leakage current ILO Output leakage current ICC Max. (1) Unit 0V ≤VIN ≤VCC ±2.5 µA 0V ≤VOUT ≤VCC, Q in Hi-Z ±2.5 µA VCC = 5 V, S = VIH, f = 2 MHz, Q = open 2 mA VCC = 2.5 V, S = VIH, f = 2 MHz, Q = open 1 mA VCC = 2.5 V, S = VSS, C = VSS, ORG = VSS or VCC, pin7 = VCC, VSS or Hi-Z 5 µA Test condition Supply current (CMOS inputs) Min.
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M93C46, M93C56, M93C66, M93C76, M93C86 Table 20. DC and AC parameters AC characteristics (M93Cx6, device grade 6 or 3) Test conditions specified in Table 12 and Table 9 Symbol Alt. fC fSK tSLCH tSHCH tSLSH(1) tCSS Parameter Clock frequency Min. Max. Unit D.C.
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DC and AC parameters Table 21. M93C46, M93C56, M93C66, M93C76, M93C86 AC characteristics (M93Cx6-W, device grade 6) (continued) Test conditions specified in Table 13 and Table 10 Symbol Alt. tSLQZ tDF tCHQL Parameter Min. Max. Unit Chip Select low to output Hi-Z 100 ns tPD0 Delay to output low 200 ns tCHQV tPD1 Delay to output valid 200 ns tW tWP Erase or Write cycle time 5 ms 1.
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M93C46, M93C56, M93C66, M93C76, M93C86 Table 23. DC and AC parameters AC characteristics (M93Cx6-R) Test conditions specified in Table 13 and Table 11 Symbol Alt. fC fSK tSLCH Min.(1) Max.(1) Unit Clock frequency D.C.
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DC and AC parameters M93C46, M93C56, M93C66, M93C76, M93C86 Figure 10. Synchronous timing (Read or Write) C tCLSL S tDVCH tCHDX tSLSH A0 An D tCHQV tSLQZ tCHQL Hi-Z Q Q15/Q7 ADDRESS INPUT Q0 DATA OUTPUT AI00820C Figure 11.
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M93C46, M93C56, M93C66, M93C76, M93C86 12 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers the M93C86, M93C76, M93C66, M93C56 and M93C46 in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label.
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Package mechanical data M93C46, M93C56, M93C66, M93C76, M93C86 Figure 13. SO8 narrow – 8 lead plastic small outline, 150 mils body width, package outline h x 45˚ A2 A c ccc b e 0.25 mm GAUGE PLANE D k 8 E1 E 1 L A1 L1 SO-A 1. Drawing is not to scale. Table 25. SO8 narrow – 8 lead plastic small outline, 150 mils body width, package data inches(1) millimeters Symbol Typ Min A Max Typ 1.75 Max 0.0689 A1 0.1 A2 1.25 b 0.28 0.48 0.011 0.0189 c 0.17 0.23 0.0067 0.
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M93C46, M93C56, M93C66, M93C76, M93C86 Package mechanical data Figure 14. UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual flat package no lead 2 x 3 mm, outline MB e D MC e b L1 L3 E b L1 L3 E2 Pin 1 E2 K K L A L D2 D2 eee A1 ZW_MEe 1. Drawing is not to scale. 2. The central pad (area E2 by D2 in the above illustration) is pulled, internally, to VSS. It must not be allowed to be connected to any other voltage or signal line on the PCB, for example during the soldering process. 3.
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Package mechanical data M93C46, M93C56, M93C66, M93C76, M93C86 Figure 15. TSSOP8 – 8 lead thin shrink small outline, package outline D 8 5 c E1 1 E 4 α A1 A L A2 L1 CP b e TSSOP8AM 1. Drawing is not to scale. Table 27. TSSOP8 – 8 lead thin shrink small outline, package mechanical data inches(1) millimeters Symbol Typ. Min. A Max. 0.05 0.15 0.8 1.05 b 0.19 c 0.09 1 CP Max. 0.0472 0.002 0.0059 0.0315 0.0413 0.3 0.0075 0.0118 0.2 0.0035 0.0079 0.0394 0.1 0.
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M93C46, M93C56, M93C66, M93C76, M93C86 13 Part numbering Part numbering Table 28. Ordering information scheme Example: M93C86 – W MN 6 T P /S Device type M93 = MICROWIRE serial access EEPROM Device function 86 = 16 Kbit (2048 x 8) 76 = 8 Kbit (1024 x 8) 66 = 4 Kbit (512 x 8) 56 = 2 Kbit (256 x 8) 46 = 1 Kbit (128 x 8) Operating voltage blank = VCC = 4.5 to 5.5 V W = VCC = 2.5 to 5.5 V R = VCC = 1.8 to 5.
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Revision history 14 M93C46, M93C56, M93C66, M93C76, M93C86 Revision history Table 29. Document revision history Date Revision Changes 2.0 Document reformatted, and reworded, using the new template. Temperature range 1 removed. TSSOP8 (3x3mm) package added. New products, identified by the process letter W, added, with fc(max) increased to 1MHz for -R voltage range, and to 2MHz for all other ranges (and corresponding parameters adjusted) 26-Mar-2003 2.
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M93C46, M93C56, M93C66, M93C76, M93C86 Table 29. Date Revision history Document revision history (continued) Revision Changes 7 Document reformatted. TSSOP8 3 × 3 mm (DS) package removed. Erase/Write Enable (EWEN) instruction replaced by Write Enable (WEN). Erase/Write Disable (EWDS) instruction replaced by Write Disable (WDS). Section 7: Initial delivery state modified, ACTIVE POWER AND STANDBY POWER MODES section removed.
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M93C46, M93C56, M93C66, M93C76, M93C86 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.