Datasheet

DocID12943 Rev 14 25/47
M24M01-R M24M01-DF DC and AC parameters
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Table 10. Cycling performance
Symbol Parameter Test condition
(1)
1. Cycling performance for products identified by process letter K
Max. Unit
Ncycle
Write cycle
endurance
(2)
2. The write cycle endurance is defined for group of four bytes located at addresses [4*N, 4*N+1, 4*N+2,
4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and qualification.
T
A
≤ 25 °C, V
CC
(min) < V
CC
< V
CC
(max) 4,000,000
Write cycle
(3)
3. A Write cycle is executed when either a Page Write, a Byte write, a Write Identification Page or a Lock
Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write
Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and Write cycling
T
A
= 85 °C, V
CC
(min) < V
CC
< V
CC
(max) 1,200,000
Table 11. Memory cell data retention
Parameter Test condition Min. Unit
Data retention
(1)
1. For products identified by process letter . The data retention behavior is checked in production, while the
200-year limit is defined from characterization and qualification results.
T
A
= 55 °C 200 Year