Datasheet

M24C64-DF, M24C64-W, M24C64-R, M24C64-F DC and AC parameters
Doc ID 16891 Rev 21 25/43
Table 11. Input parameters
Symbol Parameter
(1)
1. Characterized value, not tested in production.
Test condition Min. Max. Unit
C
IN
Input capacitance (SDA) 8 pF
C
IN
Input capacitance (other pins) 6 pF
Z
L
(2)
2. E2,E1,E0: Input impedance when the memory is selected (after a Start condition).
Input impedance
(E2, E1, E0, WC)
V
IN
< 0.3V
CC
30 k
Z
H
(2)
Input impedance
(E2, E1, E0, WC)
V
IN
> 0.7V
CC
500 k
Table 12. DC characteristics (M24xxx-W, device grade 6)
Symbol Parameter
Test conditions (see Ta ble 7 and
Table 10)
Min. Max. Unit
I
LI
Input leakage current
(SCL, SDA, E0, E1,
E2)
V
IN
= V
SS
or V
CC
device in Standby mode
± 2 µA
I
LO
Output leakage
current
SDA in Hi-Z, external voltage applied
on SDA: V
SS
or V
CC
± 2 µA
I
CC
Supply current (Read)
2.5 V < V
CC
< 5.5 V, f
c
= 400 kHz
(rise/fall time < 50 ns)
2mA
2.5 V < V
CC
< 5.5 V, f
c
= 1 MHz
(1)
(rise/fall time < 50 ns)
1. Only for devices operating at f
C
max = 1 MHz (see Table 17)
2.5 mA
I
CC0
Supply current (Write) During t
W
, 2.5 V < V
CC
< 5.5 V 5
(2)
2. Characterized value, not tested in production.
mA
I
CC1
Standby supply
current
Device not selected
(3)
, V
IN
= V
SS
or
V
CC
, V
CC
= 2.5 V
3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t
W
(t
W
is triggered by the correct decoding of a Write instruction).
2µA
Device not selected
(3)
, V
IN
= V
SS
or
V
CC
, V
CC
= 5.5 V
5
(4)
4. The new M24C64-W devices (identified by the process letter K) offer I
CC1
= 3µA (max)
µA
V
IL
Input low voltage
(SCL, SDA, WC)
–0.45 0.3V
CC
V
V
IH
Input high voltage
(SCL, SDA)
0.7V
CC
6.5
V
Input high voltage
(WC, E0, E1, E2)
0.7V
CC
V
CC
+0.6
V
OL
Output low voltage
I
OL
= 2.1 mA, V
CC
= 2.5 V or
I
OL
= 3 mA, V
CC
= 5.5 V
0.4 V