Datasheet

ManualsBrandsST ManualsDriversHigh Voltage High and Low-Side Driver , SO-14, 18V

This is information on a product in full production.

January 2016 DocID13989 Rev 4 1/19

L6386E

High voltage high and low-side driver

Datasheet - production data

Features

 High voltage rail up to 600 V

 dV/dt immunity ± 50 V/nsec in full temperature

range

 Driver current capability:

– 400 mA source

– 650 mA sink

 Switching times 50/30 nsec rise/fall with 1 nF

load

 CMOS/TTL Schmitt trigger inputs with

hysteresis and pull-down

 Undervoltage lockout on lower and upper

driving section

 Integrated bootstrap diode

 Outputs in phase with inputs

Applications

 Home appliances

 Induction heating

 Industrial applications and drives

 Motor drivers

– SR motors

– DC, AC, PMDC and PMAC motors

 Asymmetrical half-bridge topologies

 HVAC

 Lighting applications

 Factory automation

 Power supply systems

Description

The L6386E is a high voltage gate driver,

manufactured with the BCD™ “offline”

technology, and able to drive simultaneously one

high and one low-side power MOSFET or IGBT

device. The high-side (floating) section is able to

work with voltage rail up to 600 V. Both device

outputs can independently sink and source

650 mA and 400 mA respectively and can be

simultaneously driven high in order to drive

asymmetrical half-bridge configurations.

The L6386E device provides two input pins, two

output pins and an enable pin (SD), and

guarantees the outputs switch in phase with

inputs. The logic inputs are CMOS/TTL

compatible to ease the interfacing with controlling

devices.

The L6386E integrates a comparator (inverting

input internally referenced to 0.5 V) that can be

used to protect the device against fault events,

like the overcurrent. The DIAG output is

a diagnostic pin, driven by the comparator, and

used to signal a fault event occurrence to the

controlling device.

The bootstrap diode is integrated in the driver

allowing a more compact and reliable solution.

The L6386E device features the UVLO protection

on both supply voltages (V

and V

BOOT

)

ensuring greater protection against voltage drops

on the supply lines.

The device is available in a DIP-14 tube and

SO-14 tube, and tape and reel packaging options.

DIP-14 SO-14

www.st.com

Summary of content (19 pages)

PAGE 1
L6386E High voltage high and low-side driver Datasheet - production data Description DIP-14 SO-14 Features  High voltage rail up to 600 V  dV/dt immunity ± 50 V/nsec in full temperature range  Driver current capability: – 400 mA source – 650 mA sink  Switching times 50/30 nsec rise/fall with 1 nF load  CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down  Undervoltage lockout on lower and upper driving section  Integrated bootstrap diode  Outputs in phase with inputs Applications  Hom
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Contents L6386E Contents 1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.
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L6386E Block diagram 1 Block diagram Figure 1.
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Electrical data L6386E 2 Electrical data 2.1 Absolute maximum ratings Table 1. Absolute maximum ratings Symbol Value Unit VOUT Output voltage -3 to VBOOT - 18 V VCC Supply voltage - 0.3 to +18 V -1 to 618 V VBOOT Floating supply voltage Vhvg High-side gate output voltage - 1 to VBOOT V Vlvg Low-side gate output voltage -0.3 to VCC +0.3 V Logic input voltage -0.3 to VCC +0.3 V VDIAG Open drain forced voltage -0.3 to VCC +0.3 V VCIN Comparator input voltage -0.3 to VCC +0.
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L6386E 3 Pin connection Pin connection Figure 2.Pin connection (top view) -*/ 7#005 4% )7( )*/ 065 7$$ / $ %*"( / $ $*/ -7( 4(/% 1(/% % */ "W Table 4. Pin description No.
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Electrical characteristics L6386E 4 Electrical characteristics 4.1 AC operation VCC = 15 V; TJ = 25 °C. ‘s Symbol Table 5. AC operation electrical characteristics Pin Parameter ton 1, 3 vs. 9, 13 toff tsd tr tf 4.2 2 vs. 9, 13 9, 13 Test condition Min. High/low-side driver turn-on propagation delay High/low-side driver turn-off propagation delay VOUT = 0 V Shut down to high/low-side propagation delay Typ. Max.
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L6386E Electrical characteristics Table 6. DC operation electrical characteristics (continued) Symbol Pin Parameter Test condition Min. Typ. Max. Unit Driving buffers section Iso 9, 13 High/low-side source shortcircuit current VIN = Vih (tp < 10 s) 300 400 mA Isi 9, 13 High/low-side sink short-circuit current VIN = Vil (tp < 10 s) 500 650 mA Logic inputs Vil Vih Iih Low level logic threshold voltage 1,2,3 Iil 1.5 High level logic threshold voltage 3.
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Electrical characteristics 4.3 L6386E Timing diagram Figure 3. Input/output timing diagram )*/ -*/ 4% )065 -065 73&' 7$*/ %*"( % */ "7 Note: 8/19 If SD is set low, each output remains in shut-down condition also after the rising edge of SD, until the first rising edge of the input signal occurs.
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L6386E 5 Bootstrap driver Bootstrap driver A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode (Figure 4 a). In the L6386E device a patented integrated structure replaces the external diode. It is realized by a high voltage DMOS, driven synchronously with the low-side driver (LVG), with a diode in series, as shown in Figure 4 b. An internal charge pump (Figure 4 b) provides the DMOS driving voltage.
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Bootstrap driver L6386E For example: using a power MOSFET with a total gate charge of 30 nC the drop on the bootstrap DMOS is about 1 V, if the Tcharge is 5 s. In fact: Equation 3 30nC V drop = ---------------  125  0.8V 5s Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode can be used. Figure 4.
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L6386E Typical characteristic Figure 5. Typical rise and fall times vs. load capacitance UJNF OTFD % */ Figure 6. Quiescent current vs. supply voltage Iq (μA) 104 D99IN1057 103 5S 5G 102 10 $ O' 'PS CPUI IJHI BOE MPX TJEF CVGGFST BU $ 5BNC Figure 7. Turn-on time vs. temperature 6 8 10 12 14 16 VS(V) 15 @ Vcc = 15V 14 13 Vbth1 (V) Ton (ns) 4 Figure 8. VBOOT UV turn-on threshold vs. temperature @ Vcc = 15V 200 150 100 2 0 250 Typ.
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Typical characteristic L6386E Figure 11. Shutdown time vs. temperature Figure 12. VBOOT UV hysteresis 3 250 @ Vcc = 15V @ Vcc = 15V 2.5 Vbhys (V) tsd (ns0 200 150 Typ. 100 1.5 50 0 -45 -25 0 25 50 Tj (°C) 75 100 1 125 -45 15 1000 14 800 Typ. 11 25 50 Tj (°C) 75 100 125 600 Typ. 400 200 10 9 -45 -25 0 25 50 Tj (°C) 75 100 0 125 -45 Figure 15. VCC UV turn-off threshold vs. temperature -25 0 25 50 Tj (°C) 75 100 125 Figure 16. Output sink current vs.
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L6386E Typical characteristic Figure 17. VCC UV hysteresis vs. temperature 3 Vcchys (V) 2.5 Typ. 2 1.
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Package information 7 L6386E Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
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L6386E 7.1 Package information DIP-14 package information Figure 18. DIP-14 package outline Table 7. DIP-14 package mechanical data Dimensions (mm ) Dimensions (inch) Symbol Min. a1 0.51 B 1.39 Typ. Max. Min. Typ. Max. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L Z 3.3 1.27 0.130 2.54 DocID13989 Rev 4 0.050 0.
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Package information 7.2 L6386E SO-14 package information Figure 19. SO-14 package outline ' Table 8. SO-14 package mechanical data Dimensions (mm) Dimensions (inch) Symbol Min. Typ. Max. Min. Typ. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.30 0.004 0.012 A2 1.10 1.65 0.043 0.065 B 0.33 0.51 0.013 0.020 C 0.19 0.25 0.007 0.01 D(1) 8.55 8.75 0.337 0.344 E 3.80 4.0 0.150 0.157 e 1.27 0.050 H 5.8 6.20 0.228 0.244 h 0.25 0.50 0.01 0.02 L 0.40 1.
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L6386E 8 Order codes Order codes Table 9.
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Revision history 9 L6386E Revision history Table 10. Document revision history Date 20-Jun-2014 15-Jan-2016 18/19 Revision Changes 3 Added Section : Applications on page 1. Updated Section : Description on page 1 (replaced by new description). Updated Table 1: Device summary on page 1 (moved from page 17 to page 1, renamed title of Table 1). Updated Figure 1: Block diagram on page 3 (moved from page 1 to page 3, added Section 1: Block diagram on page 3). Updated Section 2.
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L6386E IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.