Datasheet

ManualsBrandsST ManualsDiscrete SemiconductorsPower Transistor, SOT-32, NPN, 1kV

April 2009 Doc ID 4508 Rev 5 1/9

BUX87

High voltage NPN power transistor

Features

■ High voltage capability (450 V V

CEO

)

■ Minimum lot-to-lot spread for reliable operation

■ High DC current gain

Applications

■ Flyback and forward single transistor low

power converters

Description

The BUX87 is manufactured using high voltage

multi-epitaxial planar technology for high

switching speeds and high voltage withstand

capability.

Figure 1. Internal schematic diagram

SOT-32

Table 1. Device summary

Order code Marking Package Packaging

BUX87 BUX87 SOT-32 Tube

www.st.com

Summary of content (9 pages)

PAGE 1
BUX87 High voltage NPN power transistor Features ■ High voltage capability (450 V VCEO) ■ Minimum lot-to-lot spread for reliable operation ■ High DC current gain Applications ■ Flyback and forward single transistor low power converters 3 2 1 SOT-32 Description The BUX87 is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage withstand capability. Table 1. Figure 1.
PAGE 2
Electrical ratings 1 BUX87 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Unit VCES Collector-emitter voltage (VBE = 0) 1000 V VCEO Collector-emitter voltage (IB = 0) 450 V VEBO Emitter-base voltage (IC = 0) 5 V 0.5 A 1 A Base current 0.3 A Base peak current (tp ≤ 5ms) 0.6 A PTOT Total power dissipation at Tc = 25 °C 40 W Tstg Storage temperature IC ICM IB IBM TJ Table 3.
PAGE 3
BUX87 2 Electrical characteristics Electrical characteristics Tcase = 25 °C; unless otherwise specified. Table 4. Symbol Electrical characteristics Parameter Test conditions ICES Collector cut-off current (VBE = 0) VCE = 1000 V VCE = 1000 V IEBO Emitter cut-off current (IC = 0) VEB = 5 V VCEO(sus)(1) Min. Typ. TC = 125 °C Collector-emitter I = 10 mA sustaining voltage (IB = 0) C Max.
PAGE 4
Electrical characteristics BUX87 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain Figure 5. DC current gain Figure 6. Collector-emitter saturation voltage Figure 7.
PAGE 5
BUX87 Figure 8.
PAGE 6
Package mechanical data 3 BUX87 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
PAGE 7
BUX87 Package mechanical data SOT-32 (TO-126) MECHANICAL DATA DIM. mm. MIN. TYP MAX. A 2.4 2.9 B 0.64 0.88 B1 0.39 0.63 D 10.5 11.05 E 7.4 7.8 e 2.04 2.29 2.54 e1 4.07 4.58 5.08 L 15.3 16 P 2.9 3.2 Q Q1 3.8 1 1.52 H2 2.15 I 1.
PAGE 8
Revision history 4 BUX87 Revision history Table 5. 8/9 Document revision history Date Revision Changes 21-Jun-2004 4 Document migration, no content change. 30-Apr-2009 5 Modified: Section 3 on page 6.
PAGE 9
BUX87 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.