Datasheet

BTW67 and BTW69 Series
2/6
Tables 4: Electrical Characteristics (T
j
= 25°C, unless otherwise specified)
Table 5: Thermal resistance
Symbol Test Conditions Value Unit
I
GT
V
D
= 12 V R
L
= 33 Ω
MIN. 8
mA
MAX. 80
V
GT
MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125°C
MIN. 0.2 V
I
H
I
T
= 500 mA Gate open
MAX. 150 mA
I
L
I
G
= 1.2 x I
GT
MAX. 200 mA
dV/dt
V
D
= 67 % V
DRM
Gate open T
j
= 125°C
MIN. 1000 V/µs
V
TM
I
TM
= 100 A tp = 380 µs T
j
= 25°C
MAX. 1.9 V
V
t0
Threshold voltage
T
j
= 125°C
MAX. 1.0 V
R
d
Dynamic resistance
T
j
= 125°C
MAX. 8.5 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25°C
MAX.
10 µA
T
j
= 125°C
5mA
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (D.C.)
RD91 (Insulated) 1.0
°C/W
TOP3 Insulated 0.9
R
th(j-a)
Junction to ambient (D.C.) TOP3 Insulated 50 °C/W
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Average and D.C. on-state current
versus case temperature
0 5 10 15 20 25 30 35
0
5
10
15
20
25
30
35
40
45
50
55
P(W)
I (A)
T(AV)
α = 180°
360°
α
0 25 50 75 100 125
0
10
20
30
40
50
60
I (A)
T(AV)
T (°C)
case
α
= 180°
D.C.
BTW69
BTW69
BTW67
BTW67