Datasheet

Characteristics BTW69-1200N
4/9 DocID024685 Rev 1
Figure 5. Relative variation of thermal
impedance versus pulse duration
Figure 6. Relative variation of gate trigger
current and gate trigger voltage versus junction
temperature (typical value)
K=[Z /R ]
th th
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Z
th(j-a)
Z
th(j-c)
t (s)
p
I ,V [T ] / I ,V [T =25°C]
GT GT j GT GT j
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
-40 -20 0 20 40 60 80 100 125
I
GT
V
GT
T (°C)
j
Figure 7. Relative variation of holding, and
latching currents versus junction temperature
(typical values)
Figure 8. Surge peak on-state current versus
number of cycles
I ,I [T ] / I ,I [T =25°C]
HL j HL j
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
-40 -20 0 20 40 60 80 100 125
I
H
I
L
T (°C)
j
I (A)
TSM
0
50
100
150
200
250
300
350
400
450
500
550
600
1 10 100 1000
Non repetitive
T
j
initial=25 °C
Repetitive
T
C
=102°C
t =10ms
p
One cycle
Number of cycles
Figure 9. Non repetitive surge peak on-state
current and corresponding value of I
2
t versus
sinusoidal pulse
Figure 10. On-state characteristics (maximum
values)
I (A), I t (A s)
TSM
2
2
10
100
1000
10000
0.01 0.10 1.00 10.00
dI/dt limitation: 100 A/µs
I
TSM
I²t
T
j
initial=25 °C
t (ms)
p
pulse with width t < 10 ms
p
1
10
100
1000
0.0 1.0 2.0 3.0 4.0
I
TM
(A)
T
j
max :
V
to
= 0.9 V
R
d
= 8.5 mWT
j
=25 °CT
j
=125 °C
V
TM
(V)