Datasheet

Characteristics BTW69-1200N
2/9 DocID024685 Rev 1
1 Characteristics
Table 2. Absolute maximum ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
On-state current rms (180° conduction angle) T
c
= 102 °C 50 A
IT
(AV)
Average on-state current (180° conduction angle) T
c
= 102 °C 31 A
I
TSM
Non repetitive surge peak on-state
current
t
p
= 8.3 ms
T
j
= 25 °C
763
A
t
p
= 10 ms 700
I
²
tI
²
t Value t
p
= 10 ms T
j
= 25 °C 2450 A
2
S
dI/dt
Critical rate of rise of on-state current
Gate supply: I
G
= 100 mA, dI
G
/dt = 1 A/µs
100 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 8 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
GM
Maximum peak reverse gate voltage 5 V
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions Value Unit
I
GT
V
D
= 12 V, R
L
= 33 
MIN. 8
mA
MAX. 50
V
GT
MAX. 1.3 V
V
GD
V
D
= V
DRM,
R
L
= 3.3 k T
j
= 125 °C MIN. 0.2 V
I
H
I
T
= 500 mA, gate open MAX. 100 mA
I
L
I
G
= 1.2 x I
GT
TYP. 125 mA
t
gt
I
T
= 50 A, V
D
= V
DRM
, I
G
= 200 mA, dI
G
/dt = 0.2 A/µs TYP. 2 µs
dV/dt V
D
= 67% V
DRM,
gate open T
j
= 125 °C MIN. 1000 V/µs
t
q
V
D
= 800 V, I
TM
= 50 A, V
R
= 75 V,
t
p
= 100 µs, dI
TM
/dt = 30 A/µs,
dV
D
/dt = 20 V/µs
T
j
= 125 °C TYP. 100 µs
V
TM
I
TM
= 100 A, t
p
= 380 µs T
j
= 25 °C MAX. 1.6 V
V
t0
Threshold voltage T
j
= 125 °C MAX. 0.9 V
R
D
Dynamic resistance T
j
= 125 °C MAX. 8.5 m
I
DRM
I
RRM
V
D
= V
DRM
V
R
= V
RRM
T
j
= 25 °C
MAX.
10 µA
T
j
= 125 °C 5 mA