Datasheet

Characteristics BTW68
2/8 Doc ID 17757 Rev 3
1 Characteristics
Table 2. Absolute maximum ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
On-state current rms (180° conduction angle) T
c
= 80 °C 30 A
IT
(AV)
Average on-state current (180° conduction angle) T
c
= 80 °C 19 A
I
TSM
Non repetitive surge peak on-state
current
t
p
= 8.3 ms
T
j
= 25 °C
420
A
t
p
= 10 ms 400
I
²
tI
²
t Value for fusing T
j
= 25 °C 800 A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 60 Hz T
j
= 125 °C 100 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 8 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reverse gate voltage 5 V
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions Value Unit
I
GT
V
D
= 12 V, R
L
= 33 Ω
MIN. 50 mA
V
GT
MAX. 1.5 V
V
GD
V
D
= V
DRM,
R
L
= 3.3 kΩ T
j
= 125 °C MIN. 0.2 V
t
gt
V
D
= V
DRM
, I
G
= 200 mA, dI
G
/dt = 1.5 A/µs TYP. 2 µs
I
H
I
T
= 500 mA, gate open MAX. 75 mA
I
L
I
G
= 1.2 x I
GT
TYP. 40 mA
dV/dt
V
D
= 67 % V
DRM
gate open
V
DRM
= 800 V
T
j
= 125 °C MIN.
500
V/µs
V
DRM
= 1000 V 250
V
TM
I
TM
= 60 A, t
p
= 380 µs MAX. 2.1 V
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25 °C
MAX.
20 µA
T
j
= 125 °C 6 mA
t
q
V
D
= 67% V
DRM
, I
TM
= 60 A, V
R
= 75 V
dI
TM
/dt = 30 A/µs, dV
D
/dt = 20 V/µs
T
j
= 125 °C TYP. 100 µs
Table 4. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (D.C.) 1.1 °C/W
R
th(j-a)
Junction to ambient 50 °C/W