Datasheet

BTA16, BTB16 and T16 Series
2/9
Table 3: Absolute Maximum Ratings
Tables 4: Electrical Characteristics (T
j
= 25°C, unless otherwise specified)
■ SNUBBERLESS and Logic Level (3 quadrants)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (full sine
wave)
D
2
PAK /
TO-220AB
T
c
= 100°C
16 A
TO-220AB Ins.
T
c
= 15°C
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25°C)
F = 50 Hz t = 20 ms 160
A
F = 60 Hz t = 16.7 ms 168
I
²
tI
²
t Value for fusing
t
p
= 10 ms
144
A
²
s
dI/dt
Critical rate of rise of on-state cur-
rent I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz
T
j
= 125°C
50 A/µs
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
t
p
= 10 ms T
j
= 25°C
V
DSM
/V
RSM
+ 100
V
I
GM
Peak gate current
t
p
= 20 µs T
j
= 125°C
4A
P
G(AV)
Average gate power dissipation
T
j
= 125°C
1W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Symbol Test Conditions Quadrant
T16 BTA16 / BTB16
Unit
T1635 SW CW BW
I
GT
(1)
V
D
= 12 V R
L
= 33 Ω
I - II - III MAX. 35 10 35 50 mA
V
GT
I - II - III MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125°C
I - II - III MIN. 0.2 V
I
H
(2) I
T
= 500 mA
MAX. 35 15 35 50 mA
I
L
I
G
= 1.2 I
GT
I - III
MAX.
50 25 50 70
mA
II 60 30 60 80
dV/dt (2)
V
D
= 67 %V
DRM
gate open T
j
= 125°C
MIN. 500 40 500 1000 V/µs
(dI/dt)c (2)
(dV/dt)c = 0.1 V/µs
T
j
= 125°C
MIN.
-8.5- -
A/ms(dV/dt)c = 10 V/µs
T
j
= 125°C
-3.0- -
Without snubber
T
j
= 125°C
8.5 - 8.5 14