Datasheet

BTA08, BTB08 and T8 Series
2/11
Table 3: Absolute Maximum Ratings
Tables 4: Electrical Characteristics (T
j
= 25°C, unless otherwise specified)
■ SNUBBERLESS and Logic Level (3 quadrants)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (full sine
wave)
IPAK/D
2
PAK/
DPAK/TO-220AB
T
c
= 110°C
8A
TO-220AB Ins.
T
c
= 100°C
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25°C)
F = 50 Hz t = 20 ms 80
A
F = 60 Hz t = 16.7 ms 84
I
²
tI
²
t Value for fusing
t
p
= 10 ms
36
A
²
s
dI/dt
Critical rate of rise of on-state cur-
rent I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz
T
j
= 125°C
50 A/µs
I
GM
Peak gate current
t
p
= 20 µs T
j
= 125°C
4A
P
G(AV)
Average gate power dissipation
T
j
= 125°C
1W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Symbol Test Conditions
Quad-
rant
T8 BTA08 / BTB08
Unit
T810 T835 TW SW CW BW
I
GT
(1)
V
D
= 12 V R
L
= 30 Ω
I - II - IIIMAX.1035 5 103550mA
V
GT
I - II - III MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125°C
I - II - III MIN. 0.2 V
I
H
(2) I
T
= 100 mA
MAX. 15 35 10 15 35 50 mA
I
L
I
G
= 1.2 I
GT
I - III
MAX.
25 50 10 25 50 70
mA
II 30 60 15 30 60 80
dV/dt (2)
V
D
= 67 %V
DRM
gate open
T
j
= 125°C
MIN. 40 400 20 40 400 1000 V/µs
(dI/dt)c (2)
(dV/dt)c = 0.1 V/µs T
j
= 125°C
MIN.
5.4 - 3.5 5.4 - -
A/ms
(dV/dt)c = 10 V/µs T
j
= 125°C
2.8 - 1.5 2.98 - -
Without snubber T
j
= 125°C
-4.5- -4.57