Datasheet

Characteristics BTA40, BTA41, BTB41
2/9 Doc ID 7469 Rev 8
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current
(full sine wave)
TOP3 T
c
= 95 °C
40 A
RD91 / TOP ins. T
c
= 80 °C
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25 °C)
F = 50 Hz t = 20 ms 400
A
F = 60 Hz t = 16.7 ms 420
I
²
tI
²
t Value for fusing t
p
= 10 ms 1000 A
²
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz T
j
= 125 °C 50 A/µs
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
t
p
= 10 ms T
j
= 25 °C
V
DSM
/V
RSM
+
100
V
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 8 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
I
GT
(1)
V
D
= 12 V R
L
= 33 Ω
I - II - III
IV
MAX.
50
100
mA
V
GT
ALL MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125 °C ALL MIN. 0.2 V
I
H
(2) I
T
= 500 mA MAX. 80 mA
I
L
I
G
= 1.2 I
GT
I - III - IV
MAX.
70
mA
II 160
dV/dt
(2)
V
D
= 67% V
DRM
gate open T
j
= 125 °C MIN. 500 V/µs
(dV/dt)c
(2)
(dI/dt)c = 20 A/ms T
j
= 125 °C MIN. 10 V/µs
1. Minimum I
GT
is guaranted at 5% of I
GT
max.
2. for both polarities of A2 referenced to A1