Datasheet

THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 3.8
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 100 V
V
CB
= 100 V T
case
= 150
o
C
100
5
µA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 80 V 1 mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V 2mA
V
CEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA 100 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
I
C
= 5 A I
B
= 20 mA
I
C
= 10 A I
B
= 100 mA
2
3
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
I
C
= 5 A I
B
= 20 mA
I
C
= 10 A I
B
= 100 mA
2.5
4
V
V
h
FE
∗ DC Current Gain I
C
= 3 A V
CE
= 3 V
I
C
= 5 A V
CE
= 3 V
I
C
= 10 A V
CE
= 3 V
1000
750
100
20000
V
F
* Parallel-diode Forward
Voltage
I
F
= 5 A
I
F
= 10 A
1.3
1.8
2
4
V
V
h
fe
Small Signal Current
Gain
I
C
= 1 A V
CE
= 10 V
f = 1 MHz 20
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
BDW93CFP / BDW94CFP
2/4