Datasheet

Characteristics 1N5817, 1N5818, 1N5819
2/7 Doc ID 6262 Rev 5
1 Characteristics
To evaluate the conduction losses use the following equations :
P = 0.3 x I
F(AV)
+ 0.090 I
F
2
(RMS )
for 1N5817 / 1N5818
P = 0.3 x I
F(AV)
+ 0.150 I
F
2
(RMS )
for 1N5819
Table 2. Absolute ratings (limiting values)
Symbol Parameter
Value
Unit
1N5817 1N5818 1N5819
V
RRM
Repetitive peak reverse voltage 20 30 40 V
I
F(RMS)
Forward rms current 10 A
I
F(AV)
Average forward
current
T
L
= 125 °C, δ = 0.5 1 A
I
FSM
Surge non repetitive
forward current
t
p
= 10 ms Sinusoidal 25 A
P
ARM
Repetitive peak
avalanche power
t
p
= 1 µs, T
j
= 25 °C 1200 1200 900 W
T
stg
Storage temperature range -65 to + 150 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink.
150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th (j-a)
Junction to ambient Lead length = 10 mm 100 °C/W
R
th (j-l)
Junction to lead Lead length = 10 mm 45 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions 1N5817 1N5818 1N5819 Unit
I
R
(1)
1. Pulse test : t
p
= 380 µs, δ < 2%
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
0.5 0.5 0.5 mA
T
j
= 100 °C 10 10 10 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C I
F
= 1 A 0.45 0.50 0.55 V
T
j
= 25 °C I
F
= 3 A 0.75 0.80 0.85 V
dPtot
dTj
<
1
Rth(j-a)