Data Sheet

High Accuracy, Galvanically Isolated Current Sensor IC
With Small Footprint SOIC8 Package
ACS723
6
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
COMMON ELECTRICAL CHARACTERISTICS
1:
Valid through the full range of T
A
= –40°C to 150°C
, and at V
CC
=
5.0 V; unless otherwise specif ied
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Supply Voltage V
CC
4.5 5 5.5 V
Supply Current I
CC
V
CC
within V
CC
(min) and V
CC
(max) 9 14 mA
Output Capacitance Load C
L
VIOUT to GND 10 nF
Output Resistive Load R
L
VIOUT to GND 4.7 kΩ
Primary Conductor Resistance R
IP
T
A
= 25°C 0.65 mΩ
Magnetic Coupling Factor C
F
10 G/A
Rise Time t
r
I
P
= I
P
(max), T
A
= 25°C, C
L
= 1 nF,
BW_SEL tied to GND
4 μs
I
P
= I
P
(max), T
A
= 25°C, C
L
= 1 nF,
BW_SEL tied to VCC
17.5 μs
Propagation Delay t
pd
I
P
= I
P
(max), T
A
= 25°C, C
L
= 1 nF,
BW_SEL tied to GND
1 μs
I
P
= I
P
(max), T
A
= 25°C, C
L
= 1 nF,
BW_SEL tied to VCC
5 μs
Response Time t
RESPONSE
I
P
= I
P
(max), T
A
= 25°C, C
L
= 1 nF,
BW_SEL tied to GND
5 μs
I
P
= I
P
(max), T
A
= 25°C, C
L
= 1 nF,
BW_SEL tied to VCC
22.5 μs
Internal Bandwidth BWi
Small signal –3 dB; C
L
= 1 nF,
BW_SEL tied to GND
80 kHz
Small signal –3 dB; C
L
= 1nF,
BW_SEL tied to VCC
20 kHz
Noise Density I
ND
Input referenced noise density;
T
A
= 25°C, C
L
= 1 nF
110
µA
(rms)
/
Hz
Noise I
N
Input referenced noise; BWi = 80 kHz,
T
A
= 25°C, C
L
= 1 nF
30 mA
(rms)
Input referenced noise; BWi = 20 kHz,
T
A
= 25°C, C
L
= 1 nF
15 mA
(rms)
Nonlinearity E
LIN
Through full range of I
PR
±1 %
Saturation Voltage
2
V
OH
R
L
= 4.7 kΩ, T
A
= 25°C V
CC
– 0.5 V
V
OL
R
L
= 4.7 kΩ, T
A
= 25°C 0.5 V
Power-On Time t
PO
Output reaches 90% of steady-state
level, T
A
= 25°C, I
P
= I
PR
(max) applied
64 μs
1
Device may be operated at higher primary current levels, I
P
, ambient temperatures, T
A
, and internal leadframe temperatures, provided the Maximum Junction Tem-
perature, T
J
(max), is not exceeded.
2
The sensor IC will continue to respond to current beyond the range of I
P
until the high or low saturation voltage; however, the nonlinearity in this region will be
worse than through the rest of the measurement range.