Data Sheet

LMV321/LMV358/LMV324 DATA SHEET
REV. 1D. Feb. 2012
3
Absolute Maximum Ratings
Parameter Min. Max. Unit
Supply Voltages 0+6V
Maximum Junction Temperature – +175 °C
Storage Temperature Range -65 +150 °C
Lead Temperature, 10 seconds – +260 °C
Input Voltage Range -
V
s
-0.5 +V
s
+0.5
V
Electrical Specifications
(T
c
= 25°C, V
s
= +2.7V, G = 2, R
L
= 10kΩ to V
s
/2, R
f
= 10kΩ, V
o (DC)
= V
cc
/2; unless otherwise noted)
Parameter Conditions Min. Typ. Max. Unit
AC Performance
Gain Bandwidth Product C
L
= 50pF, R
L
=2kΩ to V
s
/2 1.2 MHz
Phase Margin 52 deg
Gain Margin 17 dB
Slew Rate V
o
= 1V
pp
1.5 V/µs
Input Voltage Noise >50kHz 36 nV/√Hz
Crosstalk: LMV358 100kHz 91 dB
LMV324 100kHz 80 dB
DC Performance
Input Offset Voltage
1
1.7 7 mV
Average Drift 8 µV/°C
Input Bias Current
2
<1 nA
Input Offset Current
2
<1 nA
Power Supply Rejection Ratio
1
DC 50 65 dB
Supply Current (Per Channel)
1
80 120 µA
Input Characteristics
Input Common Mode Voltage Range
1
LO 0 -0.25 V
HI 1.5 1.3 V
Common Mode Rejection Ratio
1
50 70 dB
Output Characteristics
Output Voltage Swing R
L
= 10kΩ to V
s
/2; LO
1
0.1 0.01 V
R
L
= 10kΩ to V
s
/2; HI
1
2.69 2.6 V
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
Notes:
1. Guaranteed by testing or statistical analysis at +25°C.
2. +IN and -IN are gates to CMOS transistors with typical input bias current of <1nA. CMOS leakage is too small to practically measure.
Recommended Operating Conditions
Parameter Min. Max. Unit
Operating Temperature Range -40 +125 °C
Power Supply Operating Range 2.5 5.5 V