Datasheet

(V
DD
=3.0Vto3.7V,T
A
=-55°Cto+125°C,unlessotherwisenoted.)(Note1)
Note 1: Limitsare100%testedatT
A
= +25°C and T
A
=+85°C.Limitsovertheoperatingtemperaturerangeandrelevantsupply
voltage are guaranteed by design and characterization.
Note 2: All voltages are referenced to ground.
Note 3: The pullup supply voltage specification assumes that the pullup device is ideal, and therefore the high level of the pullup
isequaltoV
PU
.Inordertomeetthedevice’sV
IH
spec, the actual supply rail for the strong pullup transistor must include
marginforthevoltagedropacrossthetransistorwhenitisturnedon;thus:V
PU_ACTUAL
=V
PU_IDEAL
+V
TRANSISTOR
.
Note 4: Seetypicalperformancecurve.
Note 5: Logic-lowvoltagesarespecifiedatasinkcurrentof4mA.
Note 6: Toguaranteeapresencepulseunderlow-voltageparasite-powerconditions,V
ILMAX
may have to be reduced to as low as
0.5V.
Note 7: Logic-highvoltagesarespecifiedatasourcecurrentof1mA.
Note 8: Standbycurrentspecifiedupto+70°C.Standbycurrenttypicallyis3µAat+125°C.
Note 9: To minimize I
DDS
,DQshouldbewithinthefollowingranges:V
GND
≤V
DQ
≤V
GND
+0.3VorV
DD
-0.3V≤V
DQ
≤V
DD
.
Note 10: ActivecurrentreferstosupplycurrentduringactivetemperatureconversionsorEEPROMwrites.
Note 11: DQlineishigh(high-Zstate).
Note 12: Driftdataisbasedona1000-hourstresstestat+125°C.
Note 13: Seethe1-Wire Timing Diagrams.
Note 14: Underparasitepower,ift
RSTL
> 960µs, a power-on reset may occur.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Temperature Conversion Time t
CONV
9-bit resolution 93.75
ms
10-bit resolution 187.5
11-bit resolution 375
12-bit resolution 750
TimetoStrongPullupOn t
SPON
StartConvertTcommand 10 µs
TimeSlot t
SLOT
(Note13) 60 120 µs
Recovery Time t
REC
(Note13) 1 µs
Write-ZeroLowTime t
LOW0
(Note13) 60 120 µs
Write-OneLowTime t
LOW1
(Note13) 1 15 µs
ReadDataValid t
RDV
(Note13) 15 µs
ResetTimeHigh t
RSTH
(Note13) 480 µs
ResetTimeLow t
RSTL
(Notes13,14) 480 µs
Presence-DetectHigh t
PDHIGH
(Note13) 15 60 µs
Presence-DetectLow t
PDLOW
(Note13) 60 240 µs
Capacitance C
IN/OUT
25 pF
NONVOLATILE MEMORY (T
A
= -55°C to +100°C)
NonvolatileWriteCycleTime t
WR
2 10 ms
EEPROMWrites N
EEWR
-55°C to +55°C 50k Writes
EEPROMDataRetention t
EEDR
-55°C to +55°C 10 Years
MAX31820 1-Wire Ambient Temperature Sensor
www.maximintegrated.com
Maxim Integrated │ 3
AC Electrical Characteristics