Datasheet

Table Of Contents
DA7280
LRA/ERM Haptic Driver with Multiple Input Triggers,
Integrated Waveform Memory and Wideband Support
Datasheet
Revision 3.0
30-Jul-2019
CFR0011-120-00
11 of 76
© 2019 Dialog Semiconductor
4.3 Electrical Characteristics
Unless otherwise noted, the parameters listed in Table 6 and Table 7 are valid for T
A
= 25 ºC,
V
DD
= 3.8 V, and V
DDIO
= 1.8 V.
Table 6: Current Consumption
Parameter
Description
Conditions
Min
Typ
Max
Unit
I
Q_IDLE
System VDD current in
IDLE state
System waiting for
playback request
0.36
1
μA
I
Q_VDDIO
VDDIO pin current
No I/O or nIRQ activity
0.13
0.5
μA
I
Q_STANDBY
System VDD current in
STANDBY state
System waiting for
playback request
0.8
1
mA
I
Q_NO_LD
System VDD current with
no load
High-impedance load >
10 MΩ, H-bridge switching
1.35
1.5
mA
Table 7: Electrical Characteristics
Parameter
Description
Conditions
Min
Typ
Max
Unit
I
SHRT
Short circuit protection
threshold
Short to GND or VDD
400
500
600
mA
I
OUT_MAX
Maximum drive current
250
500
(Note 1)
mA
f
TRCK_LRA
LRA frequency tracking
range
Automatic tracking limits
50
300
(Note 2)
Hz
f
TRCK_ACC_LRA
LRA frequency tracking
accuracy
Frequency tracking
accuracy during playback
0.5
Hz
f
WIDEBAND
Wideband frequency
range
User defined drive
frequency
25
1000
Hz
f
OUT_PWM
PWM output frequency
Differential OUTP and
OUTN switching
frequency
183
187.5
192
kHz
ERC
Programming range of
output switching pins
edge rate control
OUTP and OUTN slope
25
100
100
mV/ns
f
IN_PWM
PWM data input
frequency
10
250
kHz
R
DS_ON
H-bridge drain to
source resistance when
on
High side plus low side
FETs
2
Ω
Z
FLT_UZ
Actuator under-
impedance threshold
Not applicable for coin
ERM
4
Ω
Z
FTL_OZ
Over-impedance
threshold
Not applicable for coin
ERM
50
Ω
Z
OUT_OFF
Output impedance
when H-bridge not
switching
Pull-down enabled
15
V
DD_POR_FALL
V
DD
Power-on-Reset
falling threshold
2.4
2.55
2.7
V
Note 1 For operation up to 500 mA (instead of 250 mA), see Section 5.7.12.
Note 2 For operation outside this range, see Section 5.7.1.