Data Sheet

V
BAT
V
LOWV
I
CHG
I
PRE-CHG
Pre-Charge
Fast-Charge
Pre-Charge
Fast-Charge
t<t
DGL1(LOWV)
t
DGL1(LOWV)
t
DGL2(LOWV)
t<t
DGL2(LOWV)
t
DGL1(LOWV)
V
OVP
V -V
OVP hys(OVP)
V +V
BAT IN(DT)
V +V -V
BAT IN(DT) hys(INDT)
UVLO
UVLO -V
hys(UVLO)
PGOOD
t
DGL(PGOOD)
t
DGL(OVP)
t
DGL(PGOOD)
t
DGL(NO-IN)
V
IN
t<t
DGL(OVP)
TypicalInputVoltage
OperatingRange
bq24072 , bq24073 , bq24074 , bq24075 , bq24079
www.ti.com SLUS810K –SEPTEMBER 2008–REVISED MARCH 2015
9.4 Device Functional Modes
9.4.1 Sleep Mode
When the input is between UVLO and V
IN(DT)
, the device enters sleep mode. After entering sleep mode for >20
mS the internal FET connection between the IN and OUT pin is disabled and pulling the input to ground will not
discharge the battery, other than the leakage on the BAT pin. If one has a full 1000-mAHr battery and the
leakage is 10 μA, then it would take 1000 mAHr / 10 μA = 100000 hours (11.4 years) to discharge the battery.
The self-discharge of the battery is typically five times higher than this.
9.4.2 Explanation of Deglitch Times and Comparator Hysteresis
NOTE
Figure 25 to Figure 29 are not to scale.
Figure 25. Power-Up, Power-Down, Power Good Indication
Figure 26. Precharge to Fast-Charge, Fast- to Pre-Charge Transition – t
DGL1(LOWV)
, t
DGL2(LOWV)
Copyright © 2008–2015, Texas Instruments Incorporated Submit Documentation Feedback 27
Product Folder Links: bq24072 bq24073 bq24074 bq24075 bq24079