Data Sheet

HX711
AVIA SEMICONDUCTOR
3
KEY ELECTRICAL CHARACTERISTICS
Parameter Notes MIN TYP MAX UNIT
Full scale differential
input range V(inp)-V(inn)
±0.5(AVDD/GAIN)
V
Common mode input AGND+1.2 AVDD-1.3 V
Internal Oscillator, RATE = 0 10 Hz
Internal Oscillator, RATE =
DVDD
80
Crystal or external clock,
RATE = 0
f
clk
/1,105,920
Output data rate
Crystal or external clock,
RATE = DVDD
f
clk
/138,240
Output data coding 2’s complement 800000 7FFFFF HEX
RATE = 0 400 ms
Output settling time
(1)
RATE = DVDD
50
Gain = 128 0.2 mV
Input offset drift
Gain = 64
0.4
Gain = 128
，
RATE = 0
50 nV(rms)
Input noise
Gain = 128
，RATE = DVDD
90
Input offset（Gain = 128）
±6
nV/℃
Temperature drift
Gain（Gain = 128）
±5
ppm/℃
Input common mode
rejection
Gain = 128
，
RATE = 0
100 dB
Power supply rejection
Gain = 128
，RATE = 0
100 dB
Reference bypass
（
V
BG
）
1.25 V
Crystal or external clock
frequency
1 11.0592 20 MHz
DVDD 2.6 5.5 V
Power supply voltage
AVDD，VSUP
2.6
5.5
Normal 1400
µ
A
Analog supply current
(including regulator)
Power down
0.3
Normal 100 µ
A
Digital supply current
Power down
0.2
（
1
）
Settling time refers to the time from power up, reset, input channel change and gain change
to valid stable output data.
Table 2 Key Electrical Characteristics