Datasheet

Electrical characteristics STM32F405xx, STM32F407xx
110/202 DocID022152 Rev 8
5.3.13 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A burst of fast transient voltage (positive and negative) is applied to V
DD
and V
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
Table 41. Flash memory programming with V
PP
Symbol Parameter Conditions Min
(1)
Typ Max
(1)
1. Guaranteed by design.
Unit
t
prog
Double word programming
T
A
= 0 to +40 °C
V
DD
= 3.3 V
V
PP
= 8.5 V
-16100
(2)
2. The maximum programming time is measured after 100K erase operations.
µs
t
ERASE16KB
Sector (16 KB) erase time - 230 -
mst
ERASE64KB
Sector (64 KB) erase time - 490 -
t
ERASE128KB
Sector (128 KB) erase time - 875 -
t
ME
Mass erase time - 6.9 - s
V
prog
Programming voltage - 2.7 - 3.6 V
V
PP
V
PP
voltage range - 7 - 9 V
I
PP
Minimum current sunk on
the V
PP
pin
-10--mA
t
VPP
(3)
3. V
PP
should only be connected during programming/erasing.
Cumulative time during
which V
PP
is applied
- - - 1 hour
Table 42. Flash memory endurance and data retention
Symbol Parameter Conditions
Value
Unit
Min
(1)
1. Guaranteed by characterization.
N
END
Endurance
T
A
= –40 to +85 °C (6 suffix versions)
T
A
= –40 to +105 °C (7 suffix versions)
10
kcycles
t
RET
Data retention
1 kcycle
(2)
at T
A
= 85 °C
2. Cycling performed over the whole temperature range.
30
Years1 kcycle
(2)
at T
A
= 105 °C 10
10 kcycles
(2)
at T
A
= 55 °C 20