Datasheet
Table Of Contents
- Table 1. Device summary
- 1 Introduction
- 2 Description
- Table 2. STM32F405xx and STM32F407xx: features and peripheral counts (continued)
- 2.1 Full compatibility throughout the family
- 2.2 Device overview
- 2.2.1 ARM® Cortex®-M4 core with FPU and embedded Flash and SRAM
- 2.2.2 Adaptive real-time memory accelerator (ART Accelerator™)
- 2.2.3 Memory protection unit
- 2.2.4 Embedded Flash memory
- 2.2.5 CRC (cyclic redundancy check) calculation unit
- 2.2.6 Embedded SRAM
- 2.2.7 Multi-AHB bus matrix
- 2.2.8 DMA controller (DMA)
- 2.2.9 Flexible static memory controller (FSMC)
- 2.2.10 Nested vectored interrupt controller (NVIC)
- 2.2.11 External interrupt/event controller (EXTI)
- 2.2.12 Clocks and startup
- 2.2.13 Boot modes
- 2.2.14 Power supply schemes
- 2.2.15 Power supply supervisor
- 2.2.16 Voltage regulator
- 2.2.17 Regulator ON/OFF and internal reset ON/OFF availability
- 2.2.18 Real-time clock (RTC), backup SRAM and backup registers
- 2.2.19 Low-power modes
- 2.2.20 VBAT operation
- 2.2.21 Timers and watchdogs
- 2.2.22 Inter-integrated circuit interface (I²C)
- 2.2.23 Universal synchronous/asynchronous receiver transmitters (USART)
- 2.2.24 Serial peripheral interface (SPI)
- 2.2.25 Inter-integrated sound (I2S)
- 2.2.26 Audio PLL (PLLI2S)
- 2.2.27 Secure digital input/output interface (SDIO)
- 2.2.28 Ethernet MAC interface with dedicated DMA and IEEE 1588 support
- 2.2.29 Controller area network (bxCAN)
- 2.2.30 Universal serial bus on-the-go full-speed (OTG_FS)
- 2.2.31 Universal serial bus on-the-go high-speed (OTG_HS)
- 2.2.32 Digital camera interface (DCMI)
- 2.2.33 Random number generator (RNG)
- 2.2.34 General-purpose input/outputs (GPIOs)
- 2.2.35 Analog-to-digital converters (ADCs)
- 2.2.36 Temperature sensor
- 2.2.37 Digital-to-analog converter (DAC)
- 2.2.38 Serial wire JTAG debug port (SWJ-DP)
- 2.2.39 Embedded Trace Macrocell™
- 3 Pinouts and pin description
- 4 Memory mapping
- 5 Electrical characteristics
- 5.1 Parameter conditions
- 5.2 Absolute maximum ratings
- 5.3 Operating conditions
- 5.3.1 General operating conditions
- 5.3.2 VCAP_1/VCAP_2 external capacitor
- 5.3.3 Operating conditions at power-up / power-down (regulator ON)
- 5.3.4 Operating conditions at power-up / power-down (regulator OFF)
- 5.3.5 Embedded reset and power control block characteristics
- 5.3.6 Supply current characteristics
- Table 20. Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator enabled) or RAM
- Table 21. Typical and maximum current consumption in Run mode, code with data processing running from Flash memory (ART accelerator disabled)
- Table 22. Typical and maximum current consumption in Sleep mode
- Table 23. Typical and maximum current consumptions in Stop mode
- Table 24. Typical and maximum current consumptions in Standby mode
- Table 25. Typical and maximum current consumptions in VBAT mode
- Table 26. Typical current consumption in Run mode, code with data processing running from Flash memory, regulator ON (ART accelerator enabled except prefetch), VDD = 1.8 V
- Table 27. Switching output I/O current consumption
- Table 28. Peripheral current consumption
- 5.3.7 Wakeup time from low-power mode
- 5.3.8 External clock source characteristics
- 5.3.9 Internal clock source characteristics
- 5.3.10 PLL characteristics
- 5.3.11 PLL spread spectrum clock generation (SSCG) characteristics
- 5.3.12 Memory characteristics
- 5.3.13 EMC characteristics
- 5.3.14 Absolute maximum ratings (electrical sensitivity)
- 5.3.15 I/O current injection characteristics
- 5.3.16 I/O port characteristics
- 5.3.17 NRST pin characteristics
- 5.3.18 TIM timer characteristics
- 5.3.19 Communications interfaces
- Table 54. I2C analog filter characteristics
- Table 55. SPI dynamic characteristics
- Table 56. I2S dynamic characteristics
- Table 57. USB OTG FS startup time
- Table 58. USB OTG FS DC electrical characteristics
- Table 59. USB OTG FS electrical characteristics
- Table 60. USB HS DC electrical characteristics
- Table 61. USB HS clock timing parameters
- Table 62. ULPI timing
- Table 63. Ethernet DC electrical characteristics
- Table 64. Dynamic characteristics: Eternity MAC signals for SMI
- Table 65. Dynamic characteristics: Ethernet MAC signals for RMII
- Table 66. Dynamic characteristics: Ethernet MAC signals for MII
- 5.3.20 CAN (controller area network) interface
- 5.3.21 12-bit ADC characteristics
- 5.3.22 Temperature sensor characteristics
- 5.3.23 VBAT monitoring characteristics
- 5.3.24 Embedded reference voltage
- 5.3.25 DAC electrical characteristics
- 5.3.26 FSMC characteristics
- Table 75. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings
- Table 76. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings
- Table 77. Asynchronous multiplexed PSRAM/NOR read timings
- Table 78. Asynchronous multiplexed PSRAM/NOR write timings
- Table 79. Synchronous multiplexed NOR/PSRAM read timings
- Table 80. Synchronous multiplexed PSRAM write timings
- Table 81. Synchronous non-multiplexed NOR/PSRAM read timings
- Table 82. Synchronous non-multiplexed PSRAM write timings
- Table 83. Switching characteristics for PC Card/CF read and write cycles in attribute/common space
- Table 84. Switching characteristics for PC Card/CF read and write cycles in I/O space
- Table 85. Switching characteristics for NAND Flash read cycles
- Table 86. Switching characteristics for NAND Flash write cycles
- 5.3.27 Camera interface (DCMI) timing specifications
- 5.3.28 SD/SDIO MMC card host interface (SDIO) characteristics
- 5.3.29 RTC characteristics
- 6 Package information
- 7 Part numbering
- Appendix A Application block diagrams
- 8 Revision history
DocID022152 Rev 8 101/202
STM32F405xx, STM32F407xx Electrical characteristics
Figure 31. Low-speed external clock source AC timing diagram
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 26 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in
Table 32. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).
For C
L1
and C
L2
, it is recommended to use high-quality external ceramic capacitors in the
5
pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see
Figure 32). C
L1
and C
L2
are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of C
L1
and C
L2
. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
C
L1
and C
L2
.
Table 32. HSE 4-26 MHz oscillator characteristics
(1)
1. Guaranteed by design.
Symbol Parameter Conditions Min Typ Max Unit
f
OSC_IN
Oscillator frequency - 4 - 26 MHz
R
F
Feedback resistor - - 200 - kΩ
G
m
Oscillator transconductance
Startup
5--
mA/V
G
mcritmax
Maximum critical crystal G
m
--1
t
SU(HSE)
(2)
2. Guaranteed by characterization. t
SU(HSE)
is the startup time measured from the moment it is enabled (by
software) to a stabilized 8 MHz oscillation is reached. This value is measured for a standard crystal
resonator and can vary significantly with the crystal manufacturer
Startup time V
DD
is stabilized - 2 - ms
DL
2
6&B,1
([WHUQDO
670)
FORFNVRXUFH
9
/6(+
W
I/6(
W
:/6(
,
/
7
/6(
W
W
U/6(
W
:/6(
I
/6(BH[W
9
/6(/